Meenakshi Bhaisare

Employment

Employment history is unavailable.

Education

• Devi Ahilya Vishwavidyalaya Bachelor of Engineering
  2006 - 2007
• Rajiv Gandhi Technical University Diploma in Electronics
  2000 - 2003

Projects & Funding

Projects & funding information is unavailable.

Publications (8)

• Investigation of nature of UV induced negative charge in AI<inf>2</inf>O<inf>3</inf> films
  2016 3rd International Conference on Emerging Electronics, ICEE 2016 2017 DOI: 10.1109/ICEmElec.2016.8074622
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• Thermal stability of single layer pulsed - DC reactive sputtered AlO<inf>X</inf> film and stack of ICP CVD SiN<inf>X</inf> on AlO<inf>X</inf> for p-type c-Si surface passivation
  2014 IEEE 2nd International Conference on Emerging Electronics: Materials to Devices, ICEE 2014 - Conference Proceedings 2014 DOI: 10.1109/ICEmElec.2014.7151212
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• Aluminum oxide deposited by pulsed-DC reactive sputtering for crystalline silicon surface passivation
  IEEE Journal of Photovoltaics 2013 DOI: 10.1109/JPHOTOV.2013.2251057
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• Effect of power density on the passivation quality of pulsed - DC reactive sputtered Aluminum oxide on P-Type crystalline silicon
  Conference Record of the IEEE Photovoltaic Specialists Conference 2013 DOI: 10.1109/PVSC.2013.6744357
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• High quality Al <inf>2</inf>O <inf>3</inf>dielectric films deposited by pulsed-DC reactive sputtering technique for high-k applications
  Nanoscience and Nanotechnology Letters 2012 DOI: 10.1166/nnl.2012.1362
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• Multilayer graphene as charge storage layer in floating gate flash memory
  2012 4th IEEE International Memory Workshop, IMW 2012 2012 DOI: 10.1109/IMW.2012.6213626
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• Bottom-up method for work function tuning in high-k/metal gate stacks in advanced CMOS technologies
  Proceedings of the IEEE Conference on Nanotechnology 2011 DOI: 10.1109/NANO.2011.6144557
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• Effect of different high-K dielectrics on the Pt nanocrystal formation statistics (size, density and area coverage) for flash memory application
  Materials Research Society Symposium Proceedings 2011 DOI: 10.1557/opl.2011.208
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