Arkaprava Bhattacharyya

Employment

• SASTRA University
  2014 - Present
• Universiti Teknologi Malaysia Fakulti Kejuruteraan Elektrik Post-Doc
  2013 - 2014
• Indian Institute of Science Research Associate
  2013 - 2013

Education

• Université de Bordeaux PhD
  2008 - 2011
• Jadavpur University Faculty of Science M.Sc
  2005 - 2007
• Jadavpur University Faculty of Science B.Sc.
  2002 - 2005

Projects & Funding

Projects & funding information is unavailable.

Publications (32)

• Zigzag phosphorene antidot nanoribbons (ZPANRs) for the detection of nucleobases: A DFT based study
  Journal of Applied Physics 2022 DOI: 10.1063/5.0086598
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• Recent Developments in Black Phosphorous Transistors: A Review
  Journal of Electronic Materials 2021 DOI: 10.1007/s11664-021-09183-1
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• Charge Plasma-Based Phosphorene Tunnel FET Using a Hybrid Computational Method
  Journal of Electronic Materials 2021 DOI: 10.1007/s11664-021-08882-z
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• Optimization of Gate all-around Junctionless Transistor Using Response Surface Methodology
  Silicon 2021 DOI: 10.1007/s12633-021-01042-2
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• Analysis of black phosphorus double gate MOSFET using hybrid method for analogue/RF application
  IET Circuits, Devices & Systems 2020 DOI: 10.1049/iet-cds.2020.0092
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• Twisted monolayer black phosphorus nanoribbbons: Tunable electronic and optical properties
  Journal of Applied Physics 2020 DOI: 10.1063/1.5138704
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• Influence of Temperature on p-GaN HEMT for High Power Application
  2020 5th International Conference on Devices, Circuits and Systems (ICDCS) 2020 DOI: 10.1109/icdcs48716.2020.243569
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• Computational study of phosphorene nanoribbons (PNRs) based PN junction diode with high rectification ratio
  2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 2019 DOI: 10.1109/EDSSC.2019.8754223
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• Insights on Si doping on PNRs for NDR with high PVR and diode behaviour with a high rectification ratio
  Physica E: Low-Dimensional Systems and Nanostructures 2019 DOI: 10.1016/j.physe.2019.113630
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• Optimization of the geometry of a charge plasma double-gate junctionless transistor for improved RF stability
  Journal of Computational Electronics 2019 DOI: 10.1007/s10825-019-01340-4
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