S. K. Mondal

Employment

• Istituto Italiano di Tecnologia Postdoctoral Researcher
  2025 - Present
• IISc Postdoctoral Researcher
  2024 - 2025
• Indian Institute of Science PhD Scholar
  2018 - 2024

Education

• IISc Masters of Technology
  2016 - 2018

Projects & Funding

Projects & funding information is unavailable.

Publications (14)

• Large‐Scale, Reliable Fabrication of Indium Oxide Nanowire Transistors on Paper Using a Combination of High Throughput Solution Processing Techniques
  Small Methods 2025 DOI: 10.1002/smtd.202500235
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• Inkjet-printed p-type tellurene and n-type MoS2 transistors for CMOS electronics
  2D Materials 2025 DOI: 10.1088/2053-1583/ad7ed0
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• Screen-Printed Microsupercapacitors on Paper With Additive-Free 1T MoS2 Ink for Sustainable Energy Solutions
  IEEE Journal on Flexible Electronics 2024 DOI: 10.1109/JFLEX.2024.3459854
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• Inkjet-Printed, High-Performance MoS2 Transistors and Unipolar Logic Electronics
  ACS Applied Materials and Interfaces 2024 DOI: 10.1021/acsami.4c05529
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• Printed and Room Temperature Processed Nanoparticulate VO2Thin Films Toward Memristive Device Applications
  IEEE Journal on Flexible Electronics 2023 DOI: 10.1109/JFLEX.2023.3278234
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• Super Flexible and High Mobility Inorganic/Organic Composite Semiconductors for Printed Electronics on Polymer Substrates
  Advanced Materials Technologies 2023 DOI: 10.1002/admt.202300256
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• Inkjet-printed WS2 and MoSe2 transistors with edge-FET architecture and near-vertical electronic transport
  2022 IEEE International Conference on Emerging Electronics Icee 2022 2022 DOI: 10.1109/ICEE56203.2022.10117997
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• Inkjet-Printed MoS2 Transistors with Predominantly Intraflake Transport
  Small Methods 2021 DOI: 10.1002/smtd.202100634
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• Fully Printed Vertical Transport Edge FETs for High Power Oxide Electronics
  4th Electron Devices Technology and Manufacturing Conference Edtm 2020 Proceedings 2020 DOI: 10.1109/EDTM47692.2020.9118003
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• Concurrent Subthermionic and Strong Thermionic Transport in Inkjet-Printed Indium Zinc Oxide/Silver Hybrid-Channel Field-Effect Transistors
  Advanced Electronic Materials 2019 DOI: 10.1002/aelm.201900401
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