Jaya Jha

Employment

• Indian Institute of Technology BHU Assistant Professor
  2022 - Present

Education

• Indian Institute of Technology Bombay M.Tech.-Ph.D.
  2015 - 2021
• National Institute of Technology Raipur B.Tech.
  2011 - 2015

Projects & Funding

Projects & funding information is unavailable.

Publications (14)

• A mixer architecture using GaN-based split-gate nanowire transistor
  Nanotechnology 2024 4 citations DOI: 10.1088/1361-6528/ad63b0
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• Rapid LUT Modelling Technique for GaN HEMT Based MMIC Technology
  2021 IEEE MTT-S International Microwave and RF Conference (IMARC) 2021 4 citations DOI: 10.1109/imarc49196.2021.9714638
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• Low-field mobility in an electrostatically confined 2D rectangular nanowire: effect of density of states and phonon confinement
  Nanotechnology 2021 11 citations DOI: 10.1088/1361-6528/ac1a3f
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• Improvements From SiC Substrate Thinning in AlGaN/GaN HEMTs: Disparate Effects on Contacts, Access and Channel Regions
  IEEE Electron Device Letters 2021 14 citations DOI: 10.1109/LED.2021.3068863
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• Effect of width scaling on RF and DC performance of AlGaN/GaN-based Ku-band multi-finger 250 nm high electron mobility transistor technology
  Solid-State Electronics 2021 10 citations DOI: 10.1016/j.sse.2021.108138
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• GaN-based complementary inverter logic gate using InGaN/GaN superlattice capped enhancement-mode field-effect-transistors
  Nanotechnology 2021 5 citations DOI: 10.1088/1361-6528/abfb99
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• High Power Broad C-band Amplifier Using AlGaN/GaN Based High Electron Mobility Transistors
  2021 8th International Conference on Electrical and Electronics Engineering, ICEEE 2021 2021 2 citations DOI: 10.1109/ICEEE52452.2021.9415912
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• Impact of Relative Gate Position on DC and RF Characteristics of High Performance AlGaN/GaN HEMTs
  IEEE Transactions on Electron Devices 2020 40 citations DOI: 10.1109/TED.2020.3019359
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• Off-State Degradation and Recovery in Oxide/AlGaN/GaN Heterointerfaces: Importance of Band Offset, Electron, and Hole Trapping
  ACS Applied Electronic Materials 2020 7 citations DOI: 10.1021/acsaelm.0c00322
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• Multi-finger high power gallium nitride based high electron mobility transistors
  Proceedings - 2019 6th International Conference on Electrical and Electronics Engineering, ICEEE 2019 2019 1 citation DOI: 10.1109/ICEEE2019.2019.00046
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