Dr. Sweta Chander

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Publications (36)

• Investigation of DC performance of Ge-source pocket silicon-on-insulator tunnel field effect transistor in nano regime
  International Journal of Nanoparticles 2021 DOI: 10.1504/IJNP.2021.114896
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• Analytical Drain Current Model for Source Pocket Engineered Stacked Oxide SiO<inf>2</inf>/HfO<inf>2</inf> Cylindrical Gate TFETs
  Silicon 2021 DOI: 10.1007/s12633-020-00563-6
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• Ultrathin body nanowire hetero-dielectric stacked asymmetric halo doped junctionless accumulation mode MOSFET for enhanced electrical characteristics and negative bias stability
  Superlattices and Microstructures 2020 DOI: 10.1016/j.spmi.2019.106364
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• Source pocket engineered underlap stacked-oxide cylindrical gate tunnel FETs with improved performance: design and analysis
  Applied Physics A: Materials Science and Processing 2020 DOI: 10.1007/s00339-020-3336-8
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• Simulation Study and Comparative Analysis of Some TFET Structures with a Novel Partial-Ground-Plane (PGP) Based TFET on SELBOX Structure
  Silicon 2020 DOI: 10.1007/s12633-019-00330-2
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• Improvement of Electrical Characteristics of SiGe Source Based Tunnel FET Device
  Silicon 2020 DOI: 10.1007/s12633-020-00674-0
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• Device-Level Performance Comparison of Some Pocket Engineered III-V/Si Hetero-Junction Vertical Tunnel Field Effect Transistor
  ICDCS 2020 - 2020 5th International Conference on Devices, Circuits and Systems 2020 DOI: 10.1109/ICDCS48716.2020.243576
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• Device and Circuit-Level Assessment of GaSb/Si Heterojunction Vertical Tunnel-FET for Low-Power Applications
  IEEE Transactions on Electron Devices 2020 DOI: 10.1109/TED.2020.2964428
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• Deep Insight into DC/RF and Linearity Parameters of a Novel Back Gated Ferroelectric TFET on SELBOX Substrate for Ultra Low Power Applications
  Silicon 2020 DOI: 10.1007/s12633-020-00672-2
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• Analytical drain current model of stacked oxide SiO<inf>2</inf>/HfO<inf>2</inf> cylindrical gate tunnel FETs with oxide interface charge
  Indian Journal of Physics 2020 DOI: 10.1007/s12648-019-01535-2
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