Dr. Ramesh Thamankar

Employment

• Vellore Institute of Technology University Professor
  2024 - Present
• Vellore Institute of Technology Associate Professor
  2017 - 2024
• CMR Group of Institutions Professor
  2016 - 2017
• Singapore University of Technology and Design
  2014 - 2016
• Institute of Materials Research and Engineering Scientist
  2010 - 2014
• Max-Planck-Institut für Mikrostrukturphysik Postdoctoral Fellow
  2006 - 2009
• University of California Riverside Postdoctoral Fellow
  2004 - 2006

Education

• Freie Universität Berlin Ph.D.
  2000 - 2004
• National Institute of Technology Karnataka M.Tech.
  1997 - 1999
• Mangalore University M.Sc.
  1992 - 1994

Projects & Funding

Projects & funding information is unavailable.

Publications (59)

• Pulse‐Engineered Synaptic Linearity and Non‐Volatile Memory in MoO3/TiO2 Bilayer Memristors for Neuromorphic Image Recognition
  Advanced Electronic Materials 2026 DOI: 10.1002/aelm.70525
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• Realization of current compliance and voltage stress dependent volatile to non-volatile switching transition in Mn3O4 nanowire network
  Materials Science in Semiconductor Processing 2026 DOI: 10.1016/j.mssp.2026.110827
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• Analog switching with high pass filtering in a Pt/h-BN/Pt memristor using double layered h-BN
  Materials Letters 2026 DOI: 10.1016/j.matlet.2025.139319
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• Reconfigurable, Non‐Volatile Switching in WO3 Film for Resistive Memory and Multistate Programming Toward Energy‐Efficient Neuromorphic Computing Applications
  Advanced Electronic Materials 2026 DOI: 10.1002/aelm.202500658
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• Quantized Conductance and Multilevel Memory Operation in Mn3O4 Nanowire Network Devices Combined with Low Voltage Operation and Oxygen Vacancy Induced Resistive Switching
  Advanced Electronic Materials 2025 DOI: 10.1002/aelm.202500159
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• Ionic sensing using natural indigo molecules and its impact on inhibitory and excitatory postsynaptic currents in an artificial synaptic device
  AIP Advances 2025 DOI: 10.1063/5.0278943
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• Quantum Conductance in MoO3/TiO2 Heterojunction Memristors: Crafting Controlled Analog-to-Digital Transition for Multilevel Memory Applications
  ACS Applied Electronic Materials 2025 DOI: 10.1021/acsaelm.5c00341
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• Resistive Switching in CaF2-MoS2 Nanocomposite thin films for low energy memory and neuromorphic applications
  Surfaces and Interfaces 2025 DOI: 10.1016/j.surfin.2025.106326
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• Persistent photoconductivity and Emulating Ebbinghaus forgetting curve via characterization of excitatory synaptic transmission in a ZnO-based optoelectronic synapse with ultra-low power (∼ fJ) consumption
  Applied Surface Science 2025 DOI: 10.1016/j.apsusc.2024.161767
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• A low-energy consuming, optically and electrically stimulated artificial synapse based on lead-free metal halide perovskite (Cs3Cu2I5) for neuromorphic applications
  Materials Advances 2025 DOI: 10.1039/D4MA00855C
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