About
Charles RENARD received the Ph.D. degree in materials sciences from Denis Diderot University, Paris, France, in 2005. His Ph.D. work has been done at Alcatel-Thales III-V Lab and dealt with antimonide/arsenide heterostructures for optoelectronic applications in the mid infrared. During this experience he was in charge of development of Quantum Cascade Lasers (QCLs) and detector based on III-V materials by MBE. Then he spent two years as a post-doctoral fellow at the Institut d’Electronique Fondamentale (IEF), Orsay, where he was in charge of UHV-CVD growth of nanostructures for ultimate MOSFET. In 2008 he spent 6 months in Belgium at IMEC, within the Ge III-V explore program. During this stay he was in charge of developing III-V material integration on GeOI substrate by MBE, for C-MOS sub-15nm devices. Since 2008, he is researcher at IEF where he is working on growth of IV-IV materials on Si substrate for hybrid integration. Since 2012, he has enlarged the skills of the HETERNA team by developing the epitaxial growth of III-V materials on Si. He is also involved in the EQUIPEX TEMPOS NANOMAX, where his role was initially to participate in the definition of the specifications of the microscope and the instrumental development (gas injection, design of the gas cabinet and treatment of toxic gaseous effluents) for the CVD growth of Si, Ge, and GaAs nano-objects. Since February 2019 he participates to the in-situ CVD growth in the TEM. Charles Renard became, at the end of 2012, the team leader of the HETERNA team of Nanoelectronic department of IEF. In June 2016, IEF and LPN (Laboratoire de Photonique et Nanostructure) have merged to form the C2N (Centre de nanosciences et de nanotechnologies) and the HETERNA team nane has changed to SEEDs and is now attached to the Materials department of C2N. Charles RENARD is author and co-author of more than 50 articles in international peer-reviewed journals, 3 patents and 10 invited talks.
Employment
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Centre for Nanoscience and Nanotechnology Leader of the SEEDs team
Education
Education history is unavailable.
Projects & Funding
Projects & funding information is unavailable.
Publications (45)
- Phase controlled epitaxy of wurtzite ZnS thin films by metal organic chemical vapor deposition Save
- Pixel device based on a quantum well: Preliminary results on gate dielectrics Save
- Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2H Save
- In‐Situ Transmission Electron Microscopy Observation of Germanium Growth on Freestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During Van der Waals Epitaxy Save
- Atypical reversed pressure-induced phase transformation in Ge nanowires Save
- Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells Save
- Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells Save
- Effect of Environment on Activation and Sorption of Getter Alloys and Multilayers for Hybrid Wafer-level Vacuum Packaging Save
- Effect of the Annealing Gas and RF Power Sputtering in the Electrical, Structural and Optical Properties of ITO Thin Films Save
- Contactless Investigation of the p-Type Doping Concentration Level of Single Micrometric Size GaAs Crystals Grown on Silicon for Multijunction Solar Cells Save