RK Kaneriya

About

I am leading the research focusing on advanced semiconductor materials and devices for Space Applications. I am pioneered semiconductor heterostructure growth (Nitrides and 2D materials) using Molecular Beam Epitaxy (MBE). Our research group develops next-generation high-frequency efficient transistors (RF/Microwave and Terahertz electronics devices) for Space applications. I am also leading the RF GaN HEMT proto-type Foundry.

Employment

• Space Applications Centre Scientist
  2010 - Present

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (20)

• Low temperature photoluminescence study for identification of intersubband energy levels inside triangular quantum well of AlGaN/GaN heterostructure
  Microelectronics Journal 2023 DOI: 10.1016/j.mejo.2022.105660
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• Enhanced quantum oscillations and scattering effect in quaternary InAlGaN/GaN two-dimensional electron gas
  Applied Physics Letters 2023 DOI: 10.1063/5.0142605
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• Growth and Characterization of Al (111) Thin Film on Piezoelectric Wafers for SAW Device Fabrication for Space Applications
  Nanoarchitectonics 2022 DOI: 10.37256/nat.412023
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• Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications
  Microelectronic Engineering 2022 DOI: 10.1016/j.mee.2022.111724
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• Growth and Characterization of Al (111) Thin Film on Piezoelectric Wafers for SAW Device Fabrication for Space Applications
  Nanoarchitectonics 2022 DOI: 10.37256/NAT.4120231624
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• Characterization of GaN HEMT at Cryogenic Temperatures
  2021 IEEE MTT-S International Microwave and RF Conference (IMARC) 2021 DOI: 10.1109/imarc49196.2021.9714643
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• Suppression of weak localization due to AlN interlayer in AlGaN/GaN 2DEG
  Physics Letters A 2021 DOI: 10.1016/j.physleta.2021.127693
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• Performance improvement of Al0.3Ga0.7N/AlN/GaN HEMTs using Nitrogen pre-treated Si3N4 passivation
  Microelectronic Engineering 2021 DOI: 10.1016/j.mee.2021.111617
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• A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications
  Terahertz Technology [Working Title] 2021 DOI: 10.5772/intechopen.98435
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• Optimization of Ni/Au Schottky Contacts on Al0.3Ga0.7N/AlN/GaN heterostructure for RF Applications
  International Journal of Nanotechnology and Nanoscience 2020
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