Anbarasu Manivannan

Employment

• Indian Institute of Technology Madras Associate Professor
  2018 - Present
• Indian Institute of Technology Indore Associate Professor
  2016 - Present
• Indian Institute of Technology Indore Assistant Professor
  2012 - 2016
• Rheinisch Westfalische Technische Hochschule Aachen Post-Doctoral Fellow
  2011 - 2012
• Rheinisch Westfalische Technische Hochschule Aachen Alexander von Humboldt Post-Doctoral Fellow
  2009 - 2011
• Heriot-Watt University Research Scientist
  2008 - 2008
• Indian Institute of Science Research Associate
  2007 - 2009

Education

• Indian Institute of Science Doctor of Philosophy
  2001 - 2007
• Bharathiar University Bachelor of Engineering
  1996 - 2000

Projects & Funding

Projects & funding information is unavailable.

Publications (65)

• An Ultra-Thin Amplitude-Tunable Microwave Absorber Using Nanometer-Thick GeTe Phase Change Material
  ACS Applied Electronic Materials 2026 DOI: 10.1021/acsaelm.6c00724
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• Improving Insertion Loss and Isolation in Germanium Telluride‐Based Radiofrequency Switch Using Coplanar Waveguide Layout Optimisation
  physica status solidi (RRL) – Rapid Research Letters 2026 DOI: 10.1002/pssr.70229
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• Threshold Voltage Stochasticity and a Weak Electric Field‐Assisted Threshold Switching Behaviour in GeTe4 Selector Devices
  physica status solidi (RRL) – Rapid Research Letters 2026 DOI: 10.1002/pssr.202500474
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• Wide Angle Polarization-Independent 6-Bit Optical Modulator Using Phase Change Material
  Nano Letters 2026 DOI: 10.1021/acs.nanolett.5c05799
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• Investigation of Phase Segregation in Ge15Sb85 Phase Change Material
  physica status solidi (RRL) – Rapid Research Letters 2026 DOI: 10.1002/pssr.70204
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• Design of an All‐Dielectric Electro‐Optical Modulator Using Phase Change Material With High Modulation Efficiency
  physica status solidi (RRL) – Rapid Research Letters 2026 DOI: 10.1002/pssr.70198
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• High-Performance Automotive-Grade Phase-Change Memory Based on Single-Phase In3Sb1Te2
  ACS Applied Electronic Materials 2026 DOI: 10.1021/acsaelm.6c00054
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• Impact of Te Network Connectivity in Governing the Threshold Switching Dynamics of Amorphous GeTe and GeTe6 Devices
  ACS Applied Electronic Materials 2025 DOI: 10.1021/acsaelm.5c02081
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• Interface-Controlled High-Speed, Low-Power SET Process in Thermally Stable In3Sb1Te2-Based Phase Change Memory Devices
  ACS Applied Electronic Materials 2025 DOI: 10.1021/acsaelm.5c01848
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• Impact of Eccentricity on the Performance of Nanotube Phase‐Change Memory Devices
  physica status solidi (RRL) – Rapid Research Letters 2025 DOI: 10.1002/pssr.202400424
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