PRACHI GUPTA

About

Prachi Gupta is currently pursuing Ph.D. in Semiconductor Device Fabrication at School of Computing and Electrical Engineering (SCEE), Indian Institute of Technology (IIT) Mandi, India. She has completed her Masters in technology (M.Tech.) and Bachelors in Technology (B.Tech.) in Electronics and Communication Engineering (ECE) from Guru Gobind Singh Indraprastha University (GGSIPU), Delhi. Her research interests includes Complementary Metal-Oxide-Semiconductor (CMOS) based Logic devices, High-k dielectrics, 2-Dimensional Materials based Field Effect Transistors (FETs) etc.

Employment

• Indian Institute of Science Bangalore Postdoctoral Research Associate
  2025 - Present
• JSS Academy of Technical Education Assistant Professor
  2017 - 2017

Education

• Indian Institute of Technology Mandi Ph.D.
  2018 - Present
• Guru Gobind Singh Indraprastha University Master's of Technology (ECE)
  2015 - 2017
• Maharaja Surajmal Institute of Technology Bachelor's of Technology (ECE)
  2010 - 2014

Projects & Funding

Projects & funding information is unavailable.

Publications (7)

• Facile DUV Irradiated Solution-Processed ZrO2/In2O3for Low Voltages FET Applications
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3395422
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• Facile and Cost-Effective TFA doped In2O3photodetectors for Deep Ultra Violet Applications
  7th IEEE Electron Devices Technology and Manufacturing Conference Strengthen the Global Semiconductor Research Collaboration After the Covid 19 Pandemic Edtm 2023 2023 DOI: 10.1109/EDTM55494.2023.10102980
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• Nanoscale Probing of Surface Charges in Functional Copper‐Metal Organic Clusters by Kelvin Probe Force Microscopy for Field‐Effect Transistors
  Advanced Materials Interfaces 2021 DOI: 10.1002/admi.202100529
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• Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications
  Advanced Electronic Materials 2021 DOI: 10.1002/aelm.202000835
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• Alternate lanthanum oxide/silicon oxynitride-based gate stack performance enhancement due to ultrathin oxynitride interfacial layer for CMOS applications
  Journal of Materials Science: Materials in Electronics 2019 DOI: 10.1007/s10854-019-02718-7
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• Design of modified low power CMOS differential ring oscillator using sleepy transistor concept
  Analog Integrated Circuits and Signal Processing 2018 DOI: 10.1007/s10470-018-1205-6
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• Power efficient voltage controlled oscillator design in 180nm CMOS technology
  2017 International Conference on Computing, Communication and Automation (ICCCA) 2017 DOI: 10.1109/ccaa.2017.8230032
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