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Publications (89)
- Accurate Modeling of Cryogenic Temperature Effects in 10-nm Bulk CMOS FinFETs Using the BSIM-CMG Model Save
- A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT Save
- Superior mm-Wave Large Signal Power Amplifier Reliability of p-Type FET in a 45-nm Partially-Depleted Silicon-On-Insulator RF Technology Save
- RF Reliability of CMOS-Based Power Amplifier Cell for 5G mmWave Applications Save
- Characterization and Analysis of Hot Carrier Degradation Under DC and Large-Signal RF Stress in a PDSOI Floating-Body NFET-Based Power Amplifier Cell Under WiFi Operating Conditions Save
- Deep Cryogenic Temperature TDDB in 45-nm PDSOI N-channel FETs for Quantum Computing Applications Save
- Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3–4 nm wide fins and 20 nm gate length for quantum computing applications Save
- Impact of Hot Carrier Degradation on DC and RF Performance of 45-nm Power Amplifier Cell Save
- Large Signal RF Reliability of 45-nm RFSOI Power Amplifier Cell for Wi-Fi6 Applications Save
- Suppression of Short-channel Effects by Double-gate Double-channel Device Design in Normally-off AlGaN/GaN MIS-HEMTs Save