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Publications (4)
- High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2 devices by control of oxygen-deficient layer Save
- Hf1–xZrxO2/ZrO2 Nanolaminate Thin Films as a High-κ Dielectric Save
- Ionic Sieving Through One‐Atom‐Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing Save
- Scaling down of cobalt quantum‐dots by colloidal route for non‐volatile memory device application Save