Prashanth Kumar

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Publications (9)

• Source-Drain Junction Engineering Schottky Barrier MOSFETs and their Mixed Mode Application
  Silicon 2020 DOI: 10.1007/s12633-019-00170-0
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• Impact of ferroelectric on the electrical characteristics of silicon–germanium based heterojunction Schottky barrier FET
  AEU - International Journal of Electronics and Communications 2019 DOI: 10.1016/j.aeue.2019.05.030
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• A physics-based threshold voltage model for hetero-dielectric dual material gate Schottky barrier MOSFET
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 2018 DOI: 10.1002/jnm.2320
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• Scaling of Dopant Segregation Schottky Barrier Using Metal Strip Buried Oxide MOSFET and its Comparison with Conventional Device
  Silicon 2018 DOI: 10.1007/s12633-016-9534-5
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• Suppression of ambipolar conduction and investigation of RF performance characteristics of gate-drain underlap SiGe Schottky barrier field effect transistor
  Micro and Nano Letters 2018 DOI: 10.1049/mnl.2017.0895
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• 2-D analytical modeling for electrostatic potential and threshold voltage of a dual work function gate Schottky barrier MOSFET
  Journal of Computational Electronics 2017 DOI: 10.1007/s10825-017-1011-x
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• 2D analytical model for surface potential based electric field and impact of wok function in DMG SB MOSFET
  Superlattices and Microstructures 2017 DOI: 10.1016/j.spmi.2017.06.001
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• An improved gate capacitance for two dimensional junctionless transistor
  Proceeding of the IEEE International Conference on Green Computing, Communication and Electrical Engineering, ICGCCEE 2014 2014 DOI: 10.1109/ICGCCEE.2014.6922275
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• An inclusive study on characteristics of junctionless transistor
  2014 International Conference on Electronics and Communication Systems, ICECS 2014 2014 DOI: 10.1109/ECS.2014.6892746
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