Dr. Vaibhav Purwar

Employment

• Pranveer Singh Institute of Technology,Kanpur Professor

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (23)

• Temperature dependent performance analysis of high-K dielectric pocket-double cylindrical surrounding gate (HKG-DP-DCSG) & high K-dual material- double cylindrical surrounding gate (HKG-DM-DCSG) MOSFETs
  Materials Today: Proceedings 2023 DOI: 10.1016/j.matpr.2023.03.371
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• Comparative Performance Analysis of Dual Material-Dielectric Pocket-Nano Tube (DM-DP-NT) & Dual Material-Nano Tube (DM-NT) MOSFETs
  Materials Today: Proceedings 2023 DOI: 10.1016/j.matpr.2023.03.463
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• Exploring the Self-Heating Effects & Its Impact on Thermal Noise for Dielectric Pocket Packed Double-Gate-All-Around (DPP-DGAA) MOSFETs
  Silicon 2022 DOI: 10.1007/s12633-022-01727-2
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• Investigating the Impact of Self-Heating Effects on some Thermal and Electrical Characteristics of Dielectric Pocket Gate-all-around (DPGAA) MOSFETs
  Silicon 2022 DOI: 10.1007/s12633-021-01493-7
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• Modeling of Threshold Voltage and Subthreshold Current of Junctionless Channel-Modulated Dual-Material Double-Gate (JL-CM-DMDG) MOSFETs
  Silicon 2022 DOI: 10.1007/s12633-021-01327-6
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• Impact of Temperature Variation on Analog, Hot-Carrier Injection and Linearity Parameters of Nanotube Junctionless Double-Gate-All-Around (NJL-DGAA) MOSFETs
  Silicon 2022 DOI: 10.1007/s12633-021-01069-5
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• An Analysis of Analog Performance for High-K Gate Stack Dielectric Pocket Double-Gate-All-Around (DP-DGAA) MOSFET
  Lecture Notes in Electrical Engineering 2022 DOI: 10.1007/978-981-16-2761-3_6
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• Comparative Study of Silicon and In0.53Ga0.47As-Based Gate-All-Around (GAA) MOSFETs
  Lecture Notes in Electrical Engineering 2022 DOI: 10.1007/978-981-16-2761-3_13
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• Impact of Different Gate Dielectric Materials on Analog/RF Performance of Dielectric-Pocket Double Gate-All-Around (DP − DGAA) MOSFETs
  Silicon 2022 DOI: 10.1007/s12633-021-01624-0
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• Investigation of Analog Performance of In0.53Ga0.47As-Based Nanotube Double-Gate-All-Around (DGAA) MOSFET
  Lecture Notes in Electrical Engineering 2022 DOI: 10.1007/978-981-16-2761-3_8
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