Dr.Pradipta Dutta

About

Dr.Pradipta Dutta is having 13+ Years of Teaching and Research experience. He is currently doing research in the domain of MOS Device Physics,III-V Heterostructure Devices ,Thin Film Related Devices and Quantum Transport in Low Dimensional Systems . He is a Life Member of Indian Society for Technical Education, New Delhi, India. He is also a member of Indian Science Congress.

Employment

• KIIT University Faculty
  2007 - Present

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (30)

• Structural design and performance analysis of double gate pocket TFET for low power applications
  Facta universitatis - series: Electronics and Energetics 2025 DOI: 10.2298/FUEE2503375V
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• Designing a proposed negative capacitance (NC)-FinFET with enhanced parameters for versatile application
  Journal of the Korean Physical Society 2025 DOI: 10.1007/s40042-025-01479-3
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• A Comparative Study of Material Impact on Tunnel Field-Effect Transistor (TFET) Performance
  2024 International Conference on Emerging Trends in Networks and Computer Communications Etncc 2024 Proceedings 2024 DOI: 10.1109/ETNCC63262.2024.10767569
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• Analog performance and linearity analysis of a p-type group IV-IV SiGe TFET
  Journal of Computational Electronics 2024 DOI: 10.1007/s10825-024-02141-0
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• Analysis of Electrical Parameters for the Spacerbased Double Gate Junctionless Tunnel Field Effect Transistor
  2024 IEEE 4th International Conference on Applied Electromagnetics Signal Processing and Communication Aespc 2024 2024 DOI: 10.1109/AESPC63931.2024.10872238
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• P-type Dual Material Gate Si and Si(1-x)Gex TFETs: A Comparative Study for DC and Analog/RF Performance Evaluation
  2024 4th International Conference on Advances in Electrical Computing Communication and Sustainable Technologies Icaect 2024 2024 DOI: 10.1109/ICAECT60202.2024.10469120
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• Impacts of Temperature on the Performance of Double Gate Hetero Junction Tunnel Field Effect Transistors (DG-HJ-TFETs)
  2023 IEEE 3rd International Conference on Applied Electromagnetics Signal Processing and Communication Aespc 2023 2023 DOI: 10.1109/AESPC59761.2023.10390016
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• A dual gate material tunnel field effect transistor model incorporating two-dimensional Poisson and Schrodinger wave equations
  International Journal of Numerical Modelling Electronic Networks Devices and Fields 2022 DOI: 10.1002/jnm.2933
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• Compact drain current modeling of planar InGaAs quantum well MOSFET
  Micro and Nanostructures 2022 DOI: 10.1016/j.micrna.2022.207361
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• Comparison Study of DG-MOSFET with and without Gate Stack Configuration for Biosensor Applications
  Silicon 2022 DOI: 10.1007/s12633-021-01118-z
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