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Publications (5)
- Tensile strain and Fermi level alignment in thermally grown TiO2 and Al2O3 based AlGaN/GaN MOS-HEMTs Save
- Interface dynamics in ohmic contact optimization on AlGaN/GaN heterostructure by the formation of TiN Save
- Realization of high quality silicon nitride deposition at low temperatures Save
- Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO2 as a Dielectric Save
- Thermally Grown TiO2 and Al2O3 for GaN-Based MOS-HEMTs Save