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Suraj Parkash Khanna

Also known as: Suraj P Khanna

ORCID iD 0000-0002-2733-6538
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About

Suraj Parkash Khanna received his Ph.D. in Electronic and Electrical Engineering from the University of Leeds, Leeds, UK in 2008. He continued as a Post-Doctoral Research Associate at the University of Leeds till 2011. During these six years at Leeds, he worked on molecular beam epitaxial (MBE) growth, semiconductor device microfabrication, quantum cascade lasers (QCLs), high mobility devices for Quantum Hall Effect realization and terahertz frequency optical systems. Thereafter, he worked at the Northwestern University, Evanston, USA as a Research Fellow, working on metalorgainc vapor phase epitaxy (MOVPE) growth of dilute magnetic semiconductors.

In 2012, he joined CSIR-National Physical Laboratory, New Delhi, India, as a Principal Scientist in lateral entry, in the core area of Physics and Electronics. Currently he is the Deputy Head for the 2D Physics and Quantum Resistance Metrology Group. His current research interests include hybrid heterostructure devices based on the integration of bulk semiconductors with 2D layered (van der Waals) materials for optoelectronic applications and development of indigenous Quantum Hall Resistance Primary standard based on GaAs/AlGaAs and Graphene systems. His work has led to a number of research collaborations across Americas & Europe and publication of 5 SCI journal articles with >30 impact factor and 48 SCI journal articles with >3 impact factor.

Reviewer for:
• Advanced Optical Materials, Wiley
• Applied Physics Letters, American Institute of Physics
• Chemical Engineering Journal, Elsevier
• Photonics Technology Letters, IEEE
• Physica Status Solidi (RRL), Wiley
• Solid State Science, Elsevier
• Synthetic Metals, Elsevier
• Mapan, Springer

LATEST NEWS
PhD Thesis evaluation: "Study of Polyaniline and its Nanocomposites for Gas Sensing Applications", Vishal Chaudhary, University of Delhi, 2018

• International Organizing Committee Member at upcoming "4th International Congress and Expo on Condensed Matter Physics” (ICECMP-2020) during October 12-13, 2020 at Lisbon, Portugal. https://www.scientificfederation.com/icecmp-2020/committee.php

DEVICE - Novel Edge-Contact for 2D-3D heterostructure interface (Nov 2019)
Role: CoPI
The device demonstrates fast photoresponse speeds of <40 ms range under −5 V and +5 V.
Important finding: No persistent photocurrent behavior under +ve bias conditions in the 2D/3D heterostructure photodetector. (Sensors & Actuators: A. Physical; https://doi.org/10.1016/j.sna.2019.111720)

DEVICE - MOCVD GaN/r-GO UV-Visible photodetector for low light applications (July 2019)
Role: CoPI
We have demonstrated a heterojunction photodetector (PD) based on reduced graphene oxide (r-GO) and metal–organic chemical vapor deposition (MOCVD)-grown gallium nitride (GaN) that can sense very low light intensities in the above-band-gap and below-band-gap regimes, showing no and high photoconductive gains, respectively. (ACS Applied Electronic Materials: https://pubs.acs.org/doi/abs/10.1021/acsaelm.9b00280)

DEVICE - HRGaN/r-GO based photodetector for Harsh Electronics (May 2019)
Role: CoPI
Broadband ultraviolet photodetector based on hybrid 2D/3D structure is demonstrated. The device employs a highly resistive GaN integrated with thin reduced graphene‐oxide for applications in harsh environments, working up to ±200 V bias and 116 °C with long‐term stability over 28 months. The device operates appreciably in both photovoltaic and photoconductive modes showing high responsivity and fast switching speed. (Advanced Optical Materials: https://doi.org/10.1002/adom.201900340)

DEVICE – gC3N4/Si Binary Multifunctional Photodetector (May 2018)
Role: CoPI
First realization of novel binary photoswitching over an ultrabroadband range is demonstrated. The device employs a hybrid 2D/3D structure based on silicon platform which opens up a possibility for the application of graphitic carbon‐nitride (g‐C3N4) nanosheets for light‐based binary communications, interconnects for optical computing and weak signal detections. An overlayer of g‐C3N4 may also significantly improve the performance of silicon solar cells. (Advanced Optical Materials - https://doi.org/10.1002/adom.201800191)

DEVICE – self powered UV Photodetector (DEC 2016):
Role: CoPI
Fabrication of high performance photodetectors using molecular beam epitaxy grown GaN is quite challenging & extremely costly. It is thus very essential to develop simple and cost effective fabrication routes to facilitate their large scale deployment. His group successfully demonstrated non-cleanroom fabrication of a hybrid device (r-GO/GaN) that works in self-powered mode for UV detection. (Applied Physics Letters; 109, 242102 (2016)).

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Publications (205)