Dr. Abdul Naim Khan

About

I am Abdul Naim Khan from Kota, India, working as an Assistant Professor in CSE at Swami Keshvanand Institute of Technology Management and Gramothan (SKIT), Jaipur. I hold a Ph.D. in VLSI and Microelectronics from LNMIIT, Jaipur, along with an M.Tech (Hons.) in VLSI Design and B.Tech (Hons.) in ECE. With 9 years of teaching experience, my research focuses on AlGaN/GaN HEMT and MOSHEMT modeling and simulation. Passionate about integrating research with teaching, I strive to contribute to advancements in semiconductor technology and academic excellence.

Employment

• Swami Keshvanand Institute of Technology Management and Gramothan (SKIT) Assistant Professor
  2025 - Present
• ITM University Assistant Professor
  2024 - 2025
• The LNM Institute of Information Technology Ph.D. Research Scholar
  2019 - 2025
• Jaipur National University Assistant Professor
  2011 - 2019
• Poornima Group of Colleges Lecturer
  2011 - 2011

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (21)

• Field-plate engineered nano-AlN/β-Ga2O3 MOSHEMTs for high frequency and high efficiency power applications
  Physica Scripta 2025 DOI: 10.1088/1402-4896/adc5b4
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• Advancing Electrical and Analog/RF Performance in Dual-Gate AlGaN/GaN MOSHEMT for High-Power and High-Frequency Applications
  Arabian Journal for Science and Engineering 2025 DOI: 10.1007/s13369-024-09924-4
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• Conventional to Modern Methods of Soil NPK Sensing: A Review
  IEEE Sensors Journal 2024 DOI: 10.1109/JSEN.2023.3334243
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• Improved breakdown voltage mechanism in AlGaN/GaN HEMT for RF/Microwave applications: Design and physical insights of dual field plate
  Microelectronics Reliability 2023 DOI: 10.1016/j.microrel.2023.115036
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• Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications
  Journal of Computational Electronics 2023 DOI: 10.1007/s10825-023-02024-w
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• Effect of Dual Metal on RF/Analog and Linearity Performance of Double Gate Ferroelectric Si-doped-HfO2 GaN MOSHEMT
  Silicon 2023 DOI: 10.1007/s12633-022-02045-3
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• Analog Performance of Normally-On Si3N4/AlN/β-Ga2O3 HEMT
  2023 DOI: 10.1007/978-981-19-2308-1_8
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• Influence of Al2O3 Oxide Layer Thickness Variation on PZT Ferroelectric Al0.3Ga0.7N/AlN/GaN E-Mode GR-MOSHEMT
  2023 DOI: 10.1007/978-981-19-2165-0_3
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• Performance Analysis of HfO2 and Si3N4 Dielectrics in β-Ga2O3 HEMT
  2023 DOI: 10.1007/978-981-19-2165-0_6
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• Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications
  2022 DOI: 10.21203/rs.3.rs-1935633/v1
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