Apurba Chakraborty

Employment

• Birla Institute of Technology and Science, Pilani - K. K. Birla Goa Campus Assistant Professor
  2021 - Present

Education

• IIT Kharagpur PhD
  2012 - 2016

Projects & Funding

Projects & funding information is unavailable.

Publications (26)

• Deep Parenchymal Steatosis Assessment and Quantification in Histopathology
  IEEE Access 2025 DOI: 10.1109/ACCESS.2025.3615832
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• Biomolecular Detection Using AlN/β-Ga2O3 MOSHEMT: A Machine Learning-Assisted Analytical and Simulation Framework
  IEEE Access 2025 DOI: 10.1109/ACCESS.2025.3538041
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• Investigation of Step Fin (SF), Step Drain (SD) and Step Source (SS) FinFETs with Trap Effect
  IETE Journal of Research 2022 DOI: 10.1080/03772063.2022.2071770
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• Impact of temperature on radio frequency/linearity and harmonic distortion characteristics of Ge multi‐channel fin shaped field‐effect transistor
  International Journal of RF and Microwave Computer-Aided Engineering 2022 DOI: 10.1002/mmce.22987
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• Effect of Positive/Negative Interface Trap Charges on the Performance of Multi Fin FinFET (M-FinFET)
  Silicon 2022 DOI: 10.1007/s12633-022-01669-9
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• RF/Analog performance of GaAs Multi-Fin FinFET with stress effect
  Microelectronics Journal 2021 DOI: 10.1016/j.mejo.2021.105267
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• OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations
  IEEE Transactions on Electron Devices 2018 DOI: 10.1109/TED.2018.2808334
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• Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique
  Semiconductor Science and Technology 2018 DOI: 10.1088/1361-6641/aaa7cc
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• AlGaN barrier thickness dependent surface and interface trapping characteristics of AlGaN/GaN heterostructure
  Chinese Journal of Physics 2018 DOI: 10.1016/j.cjph.2018.06.024
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• Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis
  Superlattices and Microstructures 2018 DOI: 10.1016/j.spmi.2017.10.033
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