Balwinder Raj
Dr. B. R. Ambedkar National Institute of Technology Jalandhar, National Institute of Technical Teachers Training and Research, IIT Roorkee
About
Dr. Balwinder Raj is working as Associate Professor in ECE Department, NIT Jalandhar, India. He did B. Tech, Electronics Engineering (PTU Jalandhar) in 2004, M. Tech-Microelectronics (PU Chandigarh) in 2006 and Ph.D-VLSI Design (IIT Roorkee), India in 2010. For further research work, European Commission awarded him Mobility of life research fellowship for postdoc research work at University of Rome, Tor Vergata, Italy in 2010-2011. He also worked as visiting researcher at KTH university Sweden, Oct-Nov. 2013. Dr Raj having more than 15 years teaching and research experience.
Dr. Raj received best teacher’s award from ISTE New Delhi, in July 2013. Dr. Raj has published more than 150 research papers in international/national journals and conferences. His areas of interest in research are Nanoscale Semiconductor Device Modeling, sensors design, FinFET based Memory design, Low Power VLSI Design.
Employment
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Dr. B. R. Ambedkar National Institute of Technology Jalandhar Associate Professor2023 - Present
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National Institute of Technical Teachers Training and Research Associate Professor2019 - 2023
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Dr. B. R. Ambedkar National Institute of Technology Jalandhar Assistant Professor2012 - 2019
Education
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IIT Roorkee PhD VLSI Design2006 - 2010
Projects & Funding
Projects & funding information is unavailable.
Publications (23)
- Various Materials and Structures for Heterojunction Organic Solar Cells Design for Efficiency Enhancement Save
- Energy and area efficient 4:2 compressor for sub-10 nm CMOS with gate work function engineered FinFETs Save
- Comparative Analysis of Low-Noise Power Efficient Instrumentation Amplifier for Bio-medical Application Save
- Design of 30 nm negative capacitance FinFET using PZT for high-speed processors Save
- Analytical Modeling and Simulation Investigation of Nanowire Tunnel FET for Potential and Drain Current Evaluation Save
- Performance Analysis of Spin Orbit Torque Magneto-Resistive RAM Caches in 4-core ARM Systems Save
- OFETs Electric Characteristics with Different Organic Materials for Low-Power Flexible Electronics Design Save
- Enhancing the RF performance at the nanoscale using double gate ferroelectric field effect transistor Save
- EDA Tools and Methodology for IC Design Save
- Design and Parametric Analysis of Ferroelectric Material Based Nanoscale Device Structure Save