Gananath Dash

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Publications (64)

• Calculation of quantum capacitance and sheet carrier density of graphene fets
  Springer Proceedings in Physics 2019 DOI: 10.1007/978-3-319-97604-4_3
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• Analytical approach assisted simulation study of Si, SiGe, and InP based bipolar junction transistors
  International Journal of Nanoelectronics and Materials 2019
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• Terahertz properties of gan/algan heterostructure impatt diode
  Springer Proceedings in Physics 2019 DOI: 10.1007/978-3-319-97604-4_44
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• Potentials of GaP as millimeter wave IMPATT diode with reference to Si, GaAs and GaN
  Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves 2019 DOI: 10.11972/j.issn.1001-9014.2019.04.001
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• Self-heating effects in SiGe heterojunction bipolar transistor with different Ge grading profile
  International Journal of Innovative Technology and Exploring Engineering 2019 DOI: 10.35940/ijitee.L3486.1081219
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• Effect of Channel Dimensions on Transfer Characteristics of Graphene FET
  Proceedings of International Conference on 2018 IEEE Electron Device Kolkata Conference, EDKCON 2018 2018 DOI: 10.1109/EDKCON.2018.8770440
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• Effect of InGaAsP Cap-Layer in InP/InGaAs pnp δ-Doped Heterojunction Bipolar Transistor
  Proceedings of International Conference on 2018 IEEE Electron Device Kolkata Conference, EDKCON 2018 2018 DOI: 10.1109/EDKCON.2018.8770412
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• A sensitivity analysis of millimeter wave characteristics of SiC IMPATT diodes
  Journal of Semiconductors 2017 DOI: 10.1088/1674-4926/38/6/064003
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• Data fusion & visualization application for network forensic investigation - A case study
  2017 2nd International Conference on Anti-Cyber Crimes, ICACC 2017 2017 DOI: 10.1109/Anti-Cybercrime.2017.7905301
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• Soft Computing applications in Cyber crimes
  2017 2nd International Conference on Anti-Cyber Crimes, ICACC 2017 2017 DOI: 10.1109/Anti-Cybercrime.2017.7905265
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