YG
Yordan M. Georgiev
Also known as: Yordan Georgiev, Yordan M. Gueorguiev, Jordan Georgiev, Y. Georgiev, Y. M. Georgiev, Y. M. Gueorguiev
Helmholtz-Zentrum Dresden-Rossendorf, Bulgarian Academy of Sciences, Saint Petersburg State Electrotechnical University “LETI”, Tyndall National Institute
Research areas: Engineering · Electrical and Electronic Engineering · Nanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design · Advancements in Photolithography Techniques
0000-0002-3146-8031
Employment
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Helmholtz-Zentrum Dresden-Rossendorf Head of Nanofabrication2015 - Present
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Tyndall National Institute Devices and Fabrication Activity Leader2011 - 2015
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Bulgarian Academy of Sciences Associate Professor2008 - Present
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AMO GmbH Head of Electron Beam Lithography Group2003 - 2005
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AMO GmbH Senior Researcher2000 - 2003
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Helmholtz-Zentrum Dresden-Rossendorf Guest Scientist1998 - 2000
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Bulgarian Academy of Sciences Chief Assistant Professor1997 - 2008
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Bulgarian Academy of Sciences Senior Assistant Professor1996 - 1997
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Bulgarian Academy of Sciences Ph.D. student1992 - 1996
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Bulgarian Academy of Sciences Physicist1988 - 1992
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Technical University of Sofia Post-graduate student in Applied Mathematics and Computer Science1987 - 1988
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Saint Petersburg State Electrotechnical University "LETI" Research Assistant1985 - 1987
Education
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Bulgarian Academy of Sciences Ph.D. in Physics1992 - 1996
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Saint Petersburg State Electrotechnical University “LETI” MSc in Electronic Engineering1981 - 1987
Projects & Funding
Projects & funding information is unavailable.
Publications (68)
- Enhanced light–matter interaction and photodetection in TMDs using distributed Bragg reflectors (DBRs) Save
- Observation of room-temperature gate-tunable quantum confinement effect in a photodoped junctionless MOSFET Save
- A high-performance all-silicon photodetector enabling telecom-wavelength detection at room temperature Save
- Evolution of point defects in pulsed-laser-melted Ge1-x Sn x probed by positron annihilation lifetime spectroscopy Save
- Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field Effect Transistors: Fabrication and Characterization Save
- Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques Save
- Significant Resistance Reduction in Modulation‐Doped Silicon Nanowires via Aluminum‐Induced Acceptor States in SiO2 Save
- Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting Save
- Atomic layer etching of nanowires using conventional reactive ion etching tool Save
- Fabrication of Highly n-Type-Doped Germanium Nanowires and Ohmic Contacts Using Ion Implantation and Flash Lamp Annealing Save
- Effect of a Discontinuous Ag Layer on Optical and Electrical Properties of ZnO/Ag/ZnOStructures Save
- Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon Save
- Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealing Save
- Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence Save
- Formation and crystallographic orientation of NiSi2–Si interfaces Save
- Ultrahigh Negative Infrared Photoconductance in Highly As-Doped Germanium Nanowires Induced by Hot Electron Trapping Save
- Resonant tunneling and hole transport behavior in low noise silicon tri-gate junctionless single hole transistor Save
- Towards Scalable Reconfigurable Field Effect Transistor using Flash Lamp Annealing Save
- Towards Reconfigurable Electronics: Silicidation of Top-Down Fabricated Silicon Nanowires Save
- Detection of ultra-low protein concentrations with the simplest possible field effect transistor Save