Satyam Shukla
STMicroelectronics (India), Synopsys Inc., Indian Institute of Technology Patna, Semi-Conductor Laboratory
About
Dr. Satyam Shukla is currently working as Technical Lead in R&D department of STMicroelectronics. Before joining his current position, he completed his doctorate from IIT Patna in VLSI architectural design. He graduated with an M. Tech. in 2016 and B. Tech in 2013.
With over four years of post-Ph.D. industrial experience as a Technical Lead in R&D at STMicroelectronics, successful tapeouts of multiple chips, and prior involvement in the SMDP-C2SD project under Visvesvaraya Ph.D. Scheme of MeitY, I aim to drive cutting-edge research, promoting industry-academia collaboration and enabling impactful advancements in indigenous semiconductor design and manufacturing.
His research interest includes Processor microarchitecture design, fault-tolerant VLSI architectural design, Digital VLSI design, FPGA-based system design, ASIC implementations, and system-on-chip design.
Employment
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STMicroelectronics (India) Technical Lead2023 - 2025
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Synopsys Inc. ASIC Digital Design Engineer Sr. -12022 - 2023
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Semi-Conductor Laboratory Project Trainee2015 - 2016
Education
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Indian Institute of Technology Patna PhD2017 - 2022
Projects & Funding
Projects & funding information is unavailable.
Publications (8)
- Efficient piecewise approximate multipliers for fast and error-tolerant convolution operations Save
- A parallel ring streaming dataflow based convolution array architecture for CNN accelerator Save
- An Efficient Fault-Tolerant Instruction Decoder for RISC-V Based Dual-Core Soft-Processors Save
- An energy-efficient single-cycle RV32I microprocessor for edge computing applications Save
- A Low-Overhead Reconfigurable RISC-V Quad-Core Processor Architecture for Fault-Tolerant Applications Save
- Design and ASIC Implementation of a Reconfigurable Fault-Tolerant ALU for Space Applications Save
- Modelling and mitigation of single-event upset in CMOS voltage-controlled oscillator Save
- Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET Save