Niraj Kumar Singh

Employment

• Government Polytechnic Gopalganj Lecturer
  2023 - Present
• Indian Institute of Technology Research scholar
  2017 - 2023

Education

• National Institute of Technology Arunachal Pradesh M Tech
  2014 - 2016

Projects & Funding

Projects & funding information is unavailable.

Publications (15)

• Design and investigation of charge plasma-based TMD heterojunction TFET biosensor for ultrasensitive detection
  Scientific Reports 2025 DOI: 10.1038/s41598-024-84677-6
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• Comparative Investigation of Different Doping Techniques in TMD Tunnel FET for Subdeca Nanometer Technology Nodes
  Journal of Electronic Materials 2023 DOI: 10.1007/s11664-023-10505-8
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• Design of low-power and high-performance 10 nm SRAM using Electrostatically doped TMD TFET
  2023 International Symposium on Devices, Circuits and Systems (ISDCS) 2023 DOI: 10.1109/isdcs58735.2023.10153525
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• All region analytical modeling of 2-D transition metal dichalcogenide FET by considering effect of fringing field and region-wise mobility
  Physica E: Low-dimensional Systems and Nanostructures 2023 DOI: 10.1016/j.physe.2022.115480
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• A detailed investigation of dielectric-modulated dual-gate TMD FET based label-free biosensor via analytical modelling
  Scientific Reports 2022 DOI: 10.1038/s41598-022-24677-6
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• 2-D Analytical Modeling and Simulation of Dual Material, Double Gate, Gate Stack Engineered, Junctionless MOSFET based Biosensor with Enhanced Sensitivity
  Silicon 2022 DOI: 10.1007/s12633-021-01223-z
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• Analytical Modeling of Short-Channel TMD TFET Considering Effect of Fringing Field and 2-D Junctions Depletion Regions
  IEEE Transactions on Electron Devices 2022 DOI: 10.1109/ted.2021.3135367
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• Work function optimization for enhancement of sensitivity of dual-material (DM), double-gate (DG), junctionless MOSFET-based biosensor
  Applied Physics A 2021 DOI: 10.1007/s00339-020-04256-0
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• A Compact Short-Channel Analytical Drain Current Model of Asymmetric Dual-Gate TMD FET in Subthreshold Region including Fringing Field Effects
  IEEE Access 2020 DOI: 10.1109/ACCESS.2020.3038421
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• Investigation on the Effect of Gate Dielectric and Other Device Parameters on Digital Performance of Silicene Nanoribbon Tunnel FET
  IEEE Transactions on Electron Devices 2020 DOI: 10.1109/TED.2020.2992016
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