Sudipta Das

About

Looking for a suitable position after Ph.D. in nanoelectronics from the Indian Institute of Technology Bombay, India.
Thesis Title "High-k Dielectrics on Various Substrates". Research interest in oxide electronics, Gr-IV, Solar Cell, Renewable energy system. System Expertise in MBE, PLD, XRD, AFM, TEM, Raman, CV-IV of MOS Cap. etc.

Employment

• Indian Institute of Technology Bombay Senior Research Assistant
  2009 - 2011

Education

• Indian Institute of Technology Bombay Ph.D.
  2011 - 2020
• West Bengal University of Technology M.Tech
  2007 - 2009
• University of Calcutta M.Sc.
  2002 - 2004
• University of Calcutta B.Sc.
  1999 - 2002

Projects & Funding

Projects & funding information is unavailable.

Publications (13)

• Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn
  Journal of Physics D: Applied Physics 2021 DOI: 10.1088/1361-6463/abe1e8
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• A study of electrical characteristics of Gd2O3/GaN and Gd2O3/AlGaN/GaN MOS Heterostructures
  Microelectronic Engineering 2019 DOI: 10.1016/j.mee.2019.111097
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• Impact of Punch-through Stop Implants on Channel Doping and Junction Leakage for Ge <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math> </inline-formula>-FinFET Applications
  IEEE Transactions on Electron Devices 2019 DOI: 10.1109/ted.2019.2897158
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• Self-Assembled Sn Nanocrystals as the Floating Gate of Nonvolatile Flash Memory
  ACS Applied Electronic Materials 2019 DOI: 10.1021/acsaelm.9b00379
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• Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures
  Journal of Applied Physics 2018 DOI: 10.1063/1.5020026
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• Excimer laser annealing: An alternative route and its optimisation to effectively activate Si dopants in AlN films grown by plasma assisted molecular beam epitaxy
  Materials Research Bulletin 2018 DOI: 10.1016/j.materresbull.2017.09.016
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• Epitaxial Gd2O3 on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power application
  Journal of Physics D: Applied Physics 2017 DOI: 10.1088/1361-6463/aa8e7d
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• Dislocation density and strain-relaxation in Ge 1−x Sn x layers grown on Ge/Si (0 0 1) by low-temperature molecular beam epitaxy
  Journal of Crystal Growth 2017 DOI: 10.1016/j.jcrysgro.2017.04.018
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• On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy
  Current Applied Physics 2017 DOI: 10.1016/j.cap.2016.12.020
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• Long-Term Stability of Epitaxial (Nd 1– x Gd x 2 O 3 Thin Films Grown on Si(001) for Future CMOS Devices
  IEEE Transactions on Electron Devices 2016 DOI: 10.1109/ted.2016.2566681
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