SANJEEV RAI

About

Sanjeev Rai received his Bachelor of Engineering (B.E.) degree in Electronics Engineering from the National Institute of Technology, Raipur (formerly Government Engineering College, Raipur) in 1997, the Master of Engineering (M.E.) degree in Digital Systems from Motilal Nehru National Institute of Technology Allahabad in 2002, and the Ph.D. degree from the same institute in 2013. He is currently a Professor in the Department of Electronics and Communication Engineering at MNNIT Allahabad, Prayagraj, India. With more than 22 years of teaching experience including over 17 years at MNNIT. He has made significant contributions to teaching, research, and academic leadership. He has published over 74 research articles in reputed international journals and conferences, contributed 14 book chapters, and serves as a reviewer for several leading journals and conferences. His research interests span semiconductor device modeling, analog and mixed-signal VLSI design, and nano-electronics, with a strong emphasis on physics-based and compact modeling of advanced and emerging devices, low-power and low-voltage circuit design, and device–circuit co-design under technology scaling constraints. His work further covers advanced MOSFET architectures, tunneling and steep-slope devices, emerging channel materials, nanoscale variability and reliability, ultra-low-power analog/RF front ends. He has successfully supervised 5 Ph.D. scholars, more than 44 M.Tech dissertations, and over 60 B.Tech project groups.

Employment

• Motilal Nehru National Institute of Technology Professor
  2009 - Present
• National Institute Of Technology Silchar Lecturer
  2004 - 2009

Education

• Motilal Nehru National Institute of Technology Doctor of Philosophy
  2009 - 2013
• Motilal Nehru National Institute of Technology Master of Engineering (Digital System)
  2000 - 2002
• National Institute of Technology Raipur Bachelor of Engineering
  1993 - 1997

Projects & Funding

Projects & funding information is unavailable.

Publications (68)

• Design and Analysis of Dual Metal Double Gate Charge Plasma Based Junctionless MOS Transistor for Biosensing Applications
  Lecture Notes in Electrical Engineering 2026 DOI: 10.1007/978-981-96-8690-2_20
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• Analytical Modeling Assisted Performance Analysis of SiGe-Source Heterojunction TFET-Based Biosensor for Label-Free Detection
  ECS Journal of Solid State Science and Technology 2025 DOI: 10.1149/2162-8777/ae0eb2
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• Field Effect Transistors in Gas Sensing
  Classical to Quantum Transport in Multi-Dimensional Field Effect Transistors 2025 DOI: 10.1201/9781003543923-12
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• A Si-Ge Heterojunction Doping-Less Tunnel FET with Reduced Ambipolarity and Temperature Dependence
  Lecture Notes in Electrical Engineering 2025 DOI: 10.1007/978-981-95-0203-5_1
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• Field Effect Transistors in Gas Sensing Advances in Detection and Analysis of Diverse Gases
  Classical to Quantum Transport in Multi Dimensional Field Effect Transistors 2025 DOI: 10.1201/9781003543923_12
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• Investigation and optimisation of dual source inverted T channel dopingless TFET with Tunnel gate
  International Journal of Electronics 2025 DOI: 10.1080/00207217.2025.2534989
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• Performance Analysis of Negative Capacitance-Based Gate All Around Tunnel Field Effect Transistor
  Lecture Notes in Electrical Engineering 2025 DOI: 10.1007/978-981-95-0203-5_7
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• Temperature and Dielectric Influence on Charge Plasma TFET Biosensors for Biomedical Applications
  Ecs Journal of Solid State Science and Technology 2025 DOI: 10.1149/2162-8777/addf7c
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• Temperature-resilient linearity performance of a channel-pocket-engineered SiGe-InGaAs heterojunction TFET for RF range analog devices
  International Journal of Electronics Letters 2025 DOI: 10.1080/21681724.2025.2599119
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• Analysis of III–V Heterojunction TFET for High-Frequency Analog Applications
  Journal of Electronic Materials 2024 DOI: 10.1007/s11664-024-11261-z
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