0000-0002-4217-3474 Employment
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Publications (11)
- An Improved Structure and Analysis of Asymmetrical Spacer Nanowire Tunnel Field Effect Transistor Save
- Drain Current Characteristics of 6 H-SiC MESFET with Un-Doped and Recessed Area under the Gate: A Simulation Study Save
- Improved Performance Analysis and Design of Dual Metal Gate FinFET for Low Power Digital Applications Save
- Spacer Engineered Halo-Doped Nanowire MOSFET for Digital Applications Save
- DC and RF Performance Analysis of Extended Field Plated AlGaN/GaN/ β-Ga2O3 HEMT Save
- Design and Analysis of a Symmetrical Low-κ Source-Side Spacer Multi-gate Nanowire Device Save
- Design and performance analysis of front and back Pi 6 nm gate with high K dielectric passivated high electron mobility transistor Save
- Performance Analysis of High-K Dielectric Heterojunction High Electron Mobility Transistor for RF Applications Save
- Performance analysis and optimization of asymmetric front and back pi gates with dual material in gallium nitride high electron mobility transistor for nano electronics application Save
- Qualitative Analysis & Advancement of Asymmetric Recessed Gates with Dual Floating Material GaN HEMT for Quantum Electronics Save