RAMENDRA SINGH

Employment

• Taiwan Semiconductor Manufacturing Company Ltd Principal Engineer
  2019 - Present

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (12)

• Superior Transient Response to Heavy-Ion Irradiation by N-Channel SOI-iFinFETs
  IETE Journal of Research 2022 DOI: 10.1080/03772063.2019.1696714
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• Impact of gamma-ray radiation on DC and RF performance of 10-nm bulk n-channel FinFETs
  IEEE Transactions on Device and Materials Reliability 2020 DOI: 10.1109/TDMR.2020.3033880
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• Effect of Post Radiation Annealing on the TID Response of 0.18μm bulk NFETs
  2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 2019 DOI: 10.1109/EDTM.2019.8731170
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• Experimental Evaluation of Self-Heating and Analog/RF FOM in GAA-Nanowire FETs
  IEEE Transactions on Electron Devices 2019 DOI: 10.1109/TED.2019.2924439
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• 3-D LER and RDF Matching Performance of Nanowire FETs in Inversion, Accumulation, and Junctionless Modes
  IEEE Transactions on Electron Devices 2018 DOI: 10.1109/TED.2018.2797799
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• Characterization and Global Parameter Extraction of bulk MOSFETs using BSIM-BULK Model
  2018 5th IEEE Uttar Pradesh Section International Conference on Electrical, Electronics and Computer Engineering, UPCON 2018 2018 DOI: 10.1109/UPCON.2018.8596970
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• Evaluation of 10-nm Bulk FinFET RF Performance - Conventional Versus NC-FinFET
  IEEE Electron Device Letters 2018 DOI: 10.1109/LED.2018.2846026
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• SEU Sensitivity of a 14-nm SOI FinFET eDRAM Cell under Heavy-ion Irradiation
  2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018 2018 DOI: 10.1109/ICEE44586.2018.8937969
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• 7-nm Nanowire FET process variation modeling using industry standard BSIM-CMG model
  2016 3rd International Conference on Emerging Electronics, ICEE 2016 2017 DOI: 10.1109/ICEmElec.2016.8074417
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• Analytical Modeling of Parasitic Capacitance in Inserted-Oxide FinFETs
  IEEE Transactions on Electron Devices 2017 DOI: 10.1109/TED.2017.2761984
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