Akshay K

Employment

• IIT Bhubaneswar Assistant Professsor
  2023 - Present

Education

• Indian Institute of Technology Madras PhD and MS
  2017 - 2022
• National Institute of Technology Calicut B.Tech
  2013 - 2017

Projects & Funding

Projects & funding information is unavailable.

Publications (15)

• A comprehensive TCAD based study of 4H-SiC LDMOS transistors featuring a charge coupled drift layer
  Micro and Nanostructures 2026 DOI: 10.1016/j.micrna.2026.208669
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• An analytical approach for optimizing the JFET width of a 1.2 kV 4H-SiC DMOSFET
  Physica Scripta 2026 DOI: 10.1088/1402-4896/ae5aec
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• A novel 1.2 kV 4 H-SiC charge sheet superjunction trench MOSFET: modeling, process design, and practicability
  Semiconductor Science and Technology 2025 DOI: 10.1088/1361-6641/ae2867
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• Gate Oxide Reliability Enhancement of 4H-SiC Trench MOSFETs Using Charge Sheet Super Junction
  2025 DOI: 10.1109/MIEL66332.2025.11261201
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• In₂O₃ Nanoparticles for Trace-Level Isoprene Detection in Simulated Diabetic Breath
  IEEE Sensors Journal 2025 DOI: 10.1109/JSEN.2025.3601813
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• A 2D-MoS2-Based Thin-Film Transistor for Trace-Level SO2 Monitoring
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2024.3492155
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• Optimum Aspect Ratio of Superjunction Pillars Considering Charge Imbalance
  IEEE Transactions on Electron Devices 2021 DOI: 10.1109/TED.2021.3060684
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• Improved theoretical minimum of the specific on-resistance of a superjunction
  Semiconductor Science and Technology 2021 DOI: 10.1088/1361-6641/abc921
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• Quick Design of a Superjunction Considering Charge Imbalance Due to Process Variations
  IEEE Transactions on Electron Devices 2020 DOI: 10.1109/TED.2020.2998443
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• Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design
  IEEE Journal of the Electron Devices Society 2020 DOI: 10.1109/JEDS.2020.3021827
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