Vamshi Krishna Miryala

Employment

• Indian Institute of Technology Madras Ph.D Scholar
  2014 - Present

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (10)

• Active Gate Driving Technique for Series Connecting SiC MOSFETs in the Presence of Gate Pulse Delay Mismatch
  IEEE Transactions on Industrial Electronics 2022 DOI: 10.1109/TIE.2021.3128907
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• Layout Inductance Assisted Novel Turn-on Switching Loss Recovery Technique for SiC MOSFETs
  IEEE Journal of Emerging and Selected Topics in Industrial Electronics 2021 DOI: 10.1109/JESTIE.2021.3105871
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• Adaptive Digital Technique Assisted Hard Switching Fault Detection for SiC MOSFETs
  IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2021 2021 DOI: 10.1109/WiPDAAsia51810.2021.9656023
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• Digitally Controlled Gate Current Source-Based Active Gate Driver for Silicon Carbide MOSFETs
  IEEE Transactions on Industrial Electronics 2020 DOI: 10.1109/TIE.2019.2958301
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• Low-cost analogue active gate driver for SiC MOSFET to enable operation in higher parasitic environment
  IET Power Electronics 2020 DOI: 10.1049/iet-pel.2019.0589
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• A drain current based short circuit protection technique for SiC MOSFET
  2018 International Symposium on Devices, Circuits and Systems, ISDCS 2018 2018 DOI: 10.1109/ISDCS.2018.8379649
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• A predictive model to investigate the effects of gate driver common mode currents in SiC MOSFET based converter
  2018 International Symposium on Devices, Circuits and Systems, ISDCS 2018 2018 DOI: 10.1109/ISDCS.2018.8379648
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• An easily implementable gate charge controlled active gate driver for SiC MOSFET
  Proceedings: IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society 2018 DOI: 10.1109/IECON.2018.8591843
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• Current controlled active gate driver for 1200V SiC MOSFET
  IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2016 2017 DOI: 10.1109/PEDES.2016.7914328
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• Study of the effects of parasitic inductances and device capacitances on 1200 V, 35 A SiC MOSFET based voltage source inverter design
  2014 IEEE International Conference on Power Electronics, Drives and Energy Systems, PEDES 2014 2014 DOI: 10.1109/PEDES.2014.7042035
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