Dr. Sayak Dutta Gupta

Employment

• Indian Institute of Technology Madras Assistant Professor
  2023 - Present
• Infineon Technologies (Austria) Staff Engineer
  2022 - 2023
• Indian Institute of Science Project Assistant
  2016 - 2017

Education

• Indian Institute of Science PhD
  2017 - 2022

Projects & Funding

Projects & funding information is unavailable.

Publications (20)

• Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic R on Behavior in AlGaN/GaN HEMTs—Part I
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2023.3323439
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• Impact of Buffer Capacitance-Induced Trap Charging on Electric Field Distribution and Breakdown Voltage of AlGaN/GaN HEMTs on Carbon-Doped GaN-on-Si
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2023.3321281
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• Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2023.3269409
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• Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier Diodes
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2023.3321864
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• Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic R ON Behavior in AlGaN/GaN HEMTs—Part II
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2023.3300652
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• Observations and Physical Insights Into Time-Dependent Hot Electron Current Confinement in AlGaN/GaN HEMTs on C-Doped GaN Buffer
  IEEE Transactions on Electron Devices 2022 DOI: 10.1109/TED.2022.3213627
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• Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic R ON of AlGaN/GaN HEMTs Under Semi-on State
  IEEE Transactions on Electron Devices 2022 DOI: 10.1109/TED.2022.3212327
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• Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic in AlGaN/GaN HEMTs
  IEEE Transactions on Electron Devices 2022 DOI: 10.1109/TED.2022.3209635
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• Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control Over the 2-DEG
  IEEE Transactions on Electron Devices 2022 DOI: 10.1109/TED.2022.3144378
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• Part I: Physical Insights Into Dynamic R ON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs
  IEEE Transactions on Electron Devices 2021 DOI: 10.1109/TED.2021.3109847
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