Raúl Rodríguez del Rosario

About

He was born in Las Palmas de G.C., Spain. He received the B.S. degree in telecommunications engineering from the University of Las Palmas de G.C., ULPGC, Las Palmas de G.C., Spain, in 2012, he received the Master degree in telecommunications technology from the Institute for Applied Microelectronics (IUMA), ULPGC, Spain, 2013, and he received the Ph.D. degree at the University of Las Palmas de Gran Canaria, Spain, in 2017. After thesis defense he did a postdoctoral stay in LAAS-CNRS, Toulouse. He worked as R&D Engineer at IMEC from 2019 - 2022. Currently he is working at Indra Systems as Technological Expert.

Employment

• Indra Sistemas, S.A. Technological Expert
  2023 - Present
• Interuniversitair Micro-Elektronica Centrum R&D Engineer
  2019 - 2022
• ULPGC - IUMA Researcher
  2014 - 2019

Education

• University of Las Palmas de Gran Canaria PhD in Telecommunication Technologies
  2013 - 2017
• ULPGC - IUMA Master in Telecomunication Technologies
  2012 - 2013
• ULPGC Telecomunication Engineer
  ? - 2012

Projects & Funding

Projects & funding information is unavailable.

Publications (12)

• Gate Geometry-Dependent Thermal Impedance of Depletion Mode HEMTs
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2023.3305313
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• Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures
  Applied Physics Letters 2022 DOI: 10.1063/5.0093839
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• RF Extraction of Thermal Resistance for GaN HEMTs on Silicon
  IEEE Transactions on Electron Devices 2022 DOI: 10.1109/TED.2022.3159611
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• Analysis of Gate-Metal Resistance in CMOS-Compatible RF GaN HEMTs
  IEEE Transactions on Electron Devices 2020 DOI: 10.1109/TED.2020.3017467
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• Single event effects analysis and charge collection mechanisms on AlGaN/GaN HEMTs
  Semiconductor Science and Technology 2019 DOI: 10.1088/1361-6641/ab058a
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• Numerical Simulation for DC Schottky Gate Leakage Current in AlGaN/GaN HEMTs
  2018 Spanish Conference on Electron Devices (CDE) 2018 DOI: 10.1109/cde.2018.8596883
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• DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs
  Electronics 2018 DOI: 10.3390/electronics7100210
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• Thermal Resistance Characterization for Multifinger SOI-MOSFETs
  IEEE Transactions on Electron Devices 2018 DOI: 10.1109/ted.2018.2853799
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• A System for Controlling and Monitoring IoT Applications
  Applied System Innovation 2018 DOI: 10.3390/asi1030026
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• Electrothermal DC characterization of GaN on Si MOS-HEMTs
  Solid-State Electronics 2017 DOI: 10.1016/j.sse.2017.08.002
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