Soumya Ranjan Panda

Employment

• University of Stuttgart
  2025 - Present
• National Institute of Technology Rourkela
  2024 - Present
• University of Bordeaux PostDoc Researcher
  2022 - Present
• University of Bordeaux PhD Scholar
  2018 - 2022
• Indian Institute of Technology Gandhinagar JRF
  2017 - 2018

Education

• University of Bordeaux PhD Scholar
  2018 - 2022
• National Institute of Technology Rourkela M.Tech
  2015 - 2017

Projects & Funding

Projects & funding information is unavailable.

Publications (21)

• Process-induced variability in a three-channel FinFET hydrogen sensor: design, statistical assessment and sensitivity evaluation
  Physica Scripta 2025 DOI: 10.1088/1402-4896/ae2c21
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• Dual-Mode Reconfigurable Core-Shell Nanowire Feedback Fet With Tunable Logic-Memory Windows: Proposal and Performance Optimization
  2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2025 DOI: 10.1109/sispad66650.2025.11186311
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• Recent progress in bipolar and heterojunction bipolar transistors on SOI
  Solid-State Electronics 2025 DOI: 10.1016/j.sse.2025.109101
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• Integration of Lateral Si/SiGe HBTs on Advanced FD-SOI Technology: Process Development and Challenges
  2025 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) 2025 DOI: 10.1109/sirf63957.2025.11076930
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• Design and Analysis of Wideband LNA in 30-80 GHz Frequency Range Using SiGe Technology
  2025 IEEE 7th International Conference on Emerging Electronics (ICEE) 2025 DOI: 10.1109/icee67165.2025.11409939
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• Exploring Compact Modeling of SiGe HBTs in Sub-THz Range With HICUM
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2023.3321017
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• 1T FDSOI Based LIF Neuron Without Reset Circuitry: A proposal and Investigation
  2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 2023 DOI: 10.1109/edtm55494.2023.10103130
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• SiGe-based Nanowire HBT for THz Applications
  2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 2023 DOI: 10.1109/edtm55494.2023.10103008
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• A TCAD-Based Analysis of Substrate Bias Effect on Asymmetric Lateral SiGe HBT for THz Applications
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2023.3251281
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• Investigating high-frequency sige hbts : assessment of characterization and new architecture exploration
  2022 DOI: 10.70675/df3e089dz309bz4631z9ccez0f395c44fcef
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