SB
Sanjay Banerjee
The University of Texas at Austin
Research areas: Engineering · Electrical and Electronic Engineering · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and interfaces
0000-0002-4478-7189
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Publications (528)
- Retaining Hole Conduction Using a Germanium Seed Layer for High-k HfO2 ALD on Salt-Assisted APCVD Tungsten Diselenide Save
- Effects of growth temperature on magnetic anisotropy of chromium telluride thin films grown by molecular beam epitaxy Save
- Corrections to “Semi-Classical Monte Carlo Simulation of Quantum Confinement Effects in Si Nanosheet and Fin FETs in Industry Standard Orientation” Save
- Structural, transport, and superconducting properties of Ir-doped Nb2−xIrxPdSe5 Save
- Conduction mechanisms and thermally assisted multilevel switching in MOCVD-grown MoS2 resistive random-access memory devices Save
- Intrinsic Superconducting Diode Effect Enhancement in FeSeTe by Increased Flux Pinning Save
- Signature of Quantum Phase Slips in a Layered Quasi-One-Dimensional Nb2PdS5 Superconductor Save
- Semi-Classical Monte Carlo Simulation of Quantum Confinement Effects in Si Nanosheet and FinFETs in Industry-Standard Orientation Save
- Engineering Cryogenic FETs: Addressing SCEs and Impact of Interface Traps Down to 2-K Temperature Save
- Effects of Mo Doping on the Superconducting Properties of NbSe2 Save
- CBRAM based on CVD-grown MoSe2 with the coexistence of volatile and non-volatile resistive switching Save
- Engineering Si-Qubit MOSFET: Quantum-Electrostatic Integration at Cryogenic Temperatures Save
- Enhancing chemical vapor deposition growth and fabrication techniques to maximize hole conduction in tungsten diselenide for monolithic CMOS integration Save
- Proximity Effect of Antiferromagnetic Material on FeSeTe Superconductor Save
- 2-D Analytical Modeling of the Magnetic Tunnel Junctions Including Multidomain Effects: Predictive Insights and Design Optimization Save
- Comparative Study of Steep Switching Devices for 1T Dynamic Memory Save
- Dynamics of Domains and Its Impact on Gate Tunneling in CMOS-Compatible FeFETs Save
- Ferroelectric proximity effects in two-dimensional FeSeTe Save
- Improvement of power consumption and linearity of integrate/fire characteristics using diffusive memristors with defective graphene for artificial neuron application Save
- Low-Temperature Synthesis of WSe2 by the Selenization Process under Ultrahigh Vacuum for BEOL Compatible Reconfigurable Neurons Save