ARUN KUMAR

Employment

• MNIT Assistant Professor
  2026 - Present

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (21)

• Performance benchmarking of multi-bridge core-insulator NSFETs for advanced technology nodes: A device to circuit level analysis
  Micro and Nanostructures 2026 DOI: 10.1016/j.micrna.2025.208525
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• Investigation of dual-metal/dielectric with III–V heterojunction extended-source gate-all-around vertical TFET for enhanced electrical performance
  Micro and Nanostructures 2026 DOI: 10.1016/j.micrna.2026.208752
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• Investigation of BTBT-Triggered Split-Gate Junctionless Nanosheet FETs for Analog and RF Applications
  Transactions on Electrical and Electronic Materials 2025 DOI: 10.1007/s42341-025-00626-8
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• Exploration of the Performance of SOI-Tunnel FETs with Extended Source for DC and Analog Applications
  Journal of Electronic Materials 2025 DOI: 10.1007/s11664-025-12279-7
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• Exploring the optimized Ge/Si heterostructure extended source (ES) Fin-TFETs for improved DC and analog performance
  Micro and Nanostructures 2025 DOI: 10.1016/j.micrna.2025.208133
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• Impact of Process-Induced Inclined Side-Walls on Gate Leakage Current of Nanowire GAA MOSFETs
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3357434
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• Effect of self-heating on small-signal parameters of In0.53Ga0.47As based gate-all-around MOSFETs
  Semiconductor Science and Technology 2021 DOI: 10.1088/1361-6641/ac29ed
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• Threshold Voltage Modeling of tri-Gate Schottky-Barrier (TGSB) Field-Effect-Transistors (FETs)
  Silicon 2021 DOI: 10.1007/s12633-020-00400-w
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• Self-heating effects and hot carrier degradation in In0.53Ga0.47As gate-all-around MOSFETs
  Semiconductor Science and Technology 2020 DOI: 10.1088/1361-6641/ab7f9b
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• Analytical Threshold Voltage Model of Schottky-source/drain (Schottky-S/D) double gate-all-around (DGAA) Field-Effect-Transistors (FETs)
  Proceedings of 3rd International Conference on 2019 Devices for Integrated Circuit, DevIC 2019 2019 DOI: 10.1109/DEVIC.2019.8783617
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