Gourab Dutta

Employment

• Indian Institute of Technology Kharagpur Assistant Professor
  2018 - Present

Education

• Indian Institute of Technology Madras Ph.D
  2012 - 2017

Projects & Funding

Projects & funding information is unavailable.

Publications (13)

• Dual-Gate β-Ga2O3 Nanomembrane Transistors: Device Operation and Analytical Modelling
  Journal of Physics D: Applied Physics 2021 DOI: 10.1088/1361-6463/ac0de4
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• Realistic nonlocal refrigeration engine based on Coulomb-coupled systems
  Physical Review E 2021 DOI: 10.1103/physreve.103.012131
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• Modeling and Analysis of Normally-OFF p-GaN Gate AlGaN/GaN HEMT as an ON-Chip Capacitor
  IEEE Transactions on Electron Devices 2020 DOI: 10.1109/ted.2020.3007370
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• Effect of post deposition annealing on the electrical properties of YSZ thin films deposited by pulsed laser technique
  Applied Surface Science 2020 DOI: 10.1016/j.apsusc.2020.145496
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• Low Temperature and High Pressure Oxidized Al2O3 as Gate Dielectric for AlInN/GaN MIS-HEMTs
  IEEE Transactions on Device and Materials Reliability 2020 DOI: 10.1109/tdmr.2020.3016394
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• On the Threshold Voltage of Normally-OFF AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) with p-(Al)GaN gate
  Semiconductor Science and Technology 2019 DOI: 10.1088/1361-6641/ab5607
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• Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its Modeling
  IEEE Transactions on Electron Devices 2017 DOI: 10.1109/ted.2017.2723932
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• Low-Temperature ICP-CVD SiNx as Gate Dielectric for GaN-Based MIS-HEMTs
  IEEE Transactions on Electron Devices 2016 DOI: 10.1109/ted.2016.2618421
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• A Compact Model of Drain Current for GaN HEMTs Based on 2-DEG Charge Linearization
  IEEE Transactions on Electron Devices 2016 DOI: 10.1109/ted.2016.2605130
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• Electrical properties of reactive-ion-sputtered Al2O3 on 4H-SiC
  Thin Solid Films 2016 DOI: 10.1016/j.tsf.2016.03.060
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