PRASHANT SINGH

Employment

• Micron Technology
  2023 - Present
• Sungkyunkwan University - Natural Sciences Campus Post Doctoral Researcher
  2021 - 2023
• Indian Institute of Technology Delhi Post Doctoral Fellow
  2020 - 2020
• Kamla Nehru Institute of Technology Assistant Professor
  2018 - 2020
• Sahyadri College of Engineering and Management Assistant Professor
  2014 - 2014

Education

• Indian Institute of Information Technology Allahabad Master of Technology
  2011 - 2013
• BBS College of Engineering and Technology Bachelor of Technology
  2006 - 2010

Projects & Funding

Projects & funding information is unavailable.

Publications (31)

• SnS/MoS2 van der Waals heterojunction for in-plane ferroelectric field-effect transistors with multibit memory and logic characteristics
  EcoMat 2023 DOI: 10.1002/eom2.12333
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• Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure
  Advanced Science 2022 DOI: 10.1002/advs.202200566
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• Two-Dimensional CIPS-InSe van der Waal Heterostructure Ferroelectric Field Effect Transistor for Nonvolatile Memory Applications
  ACS Nano 2022 DOI: 10.1021/acsnano.1c09136
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• Fabrication and characterization of Sr0.8Bi2.2Ta2O9 /Al2O3 gate stack for ferroelectric field effect transistors
  Applied Physics A Solids and Surfaces 2021 DOI: 10.1007/S00339-021-04287-1
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• Comparative Study on Structural and Electrical Characteristics of TiO2 Film Deposited by Plasma-Enhanced Atomic Layer Deposition and RF Sputtering
  2020 DOI: 10.1007/978-981-32-9775-3_45
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• Impact of HfO2 as Passivation Layer in the Simulation of PERC-Type Solar Cell
  2020 DOI: 10.1007/978-981-32-9775-3_46
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• Integration of ferroelectric BIT and dielectric HfO2 on silicon substrate with high data retention and endurance for ferroelectric FET applications
  Applied Physics A 2019 DOI: 10.1007/s00339-019-3091-x
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• Impact of plasma enhanced atomic layer deposited HfO2 buffer layer on the structural, electrical and ferroelectric properties of metal/ferroelectric/insulator/semiconductor gate stack for non-volatile memory applications
  Journal of Materials Science: Materials in Electronics 2019 DOI: 10.1007/s10854-019-01895-9
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• Optimization of ALD Al <inf>2</inf>O <inf>3</inf> process parameters for passivation of c-silicon and its implementation on industrial monocrystalline silicon solar cell
  Applied Physics B: Lasers and Optics 2019 DOI: 10.1007/s00340-019-7232-x
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• Structural and electrical characteristics of hfo<inf>2</inf> film deposited by rf sputtering and plasma enhanced atomic layer deposition
  Springer Proceedings in Physics 2019 DOI: 10.1007/978-3-319-97604-4_80
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