YUAN LI

Employment

• Shandong University Associate Professor
  2017 - Present
• King Abdullah University of Science and Technology Research Scientist
  2014 - 2016
• Georgia Institute of Technology Postdoctoral Fellow
  2010 - 2014
• Southeast University Assistant Professor
  2009 - 2012

Education

• Shandong University PhD
  2004 - 2009
• Shandong University BS
  2000 - 2004

Projects & Funding

Projects & funding information is unavailable.

Publications (20)

• Mesoscale Ordering 3D Mosaic Self-Assembly of Dopant-Free Hole Transport Material for Perovskite Solar Cells
  ACS Energy Letters 2024 DOI: 10.1021/acsenergylett.4c00585
  +Save
• Bias-independent subthreshold swing in ballistic cold-source field-effect transistors by drain density-of-states engineering
  Applied Physics Letters 2024 DOI: 10.1063/5.0177388
  +Save
• Toward Nanoscale Organic Tunnel Field-Effect Transistors with Small Subthreshold Swing and High On-State Current: A Computational Design Based on Two-Dimensional Covalent-Organic Frameworks
  ACS Applied Nano Materials 2024 DOI: 10.1021/acsanm.3c03366
  +Save
• The Role of Oxygen Vacancy and Hydrogen on the PBTI Reliability of ALD IGZO Transistors and Process Optimization
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3374247
  +Save
• On a Mott formalism for modeling oxide thin-film transistors
  Applied Physics Letters 2024 DOI: 10.1063/5.0212618
  +Save
• Geometric, Electronic, and Transport Predictions on Two-Dimensional Semiconducting Silicon with Kagome Lattice: Implications for Nanoscale Field-Effect Transistor Applications
  ACS Applied Nano Materials 2023 DOI: 10.1021/acsanm.3c00573
  +Save
• Functionalized MoS2 Nanoribbons for Intrinsic Cold-Source Transistors: A Computational Study
  ACS Applied Nano Materials 2022 DOI: 10.1021/acsanm.1c03793
  +Save
• Organic steep-slope nano-FETs: A rational design based on two-dimensional covalent-organic frameworks
  Organic Electronics 2022 DOI: 10.1016/j.orgel.2021.106379
  +Save
• Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device Performance
  IEEE Transactions on Electron Devices 2022 DOI: 10.1109/TED.2021.3138362
  +Save
• Switching pathway-dependent strain-effects on the ferroelectric properties and structural deformations in orthorhombic HfO2
  Journal of Applied Physics 2022 DOI: 10.1063/5.0084660
  +Save