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Nidhi Chaturvedi

Central Electronics Engineering Research Institute, Ferdinand-Braun-Institut, Banasthali University, Technical University

ORCID iD 0000-0002-4996-8886

About

Dr.-Ing. Nidhi Chaturvedi is Sr. Principal Scientist at CSIR-Central Electronics Engineering Research Institute, Pilani, Rajasthan, India. She is also Professor at Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, Uttar Pradesh, India. As an additional role, she had been the Technology and IP In-charge of CSIR-CEERI for about 5 years.

She received her Master degree in Electronics from Banasthali Vidyapith, Rajasthan, India, and the Ph.D. (Dr.-Ing.) from the Technical University, Berlin, Germany. She worked as a Gallium Nitride Device Researcher at FBH, a Leibniz-Institute in Berlin, Germany for around 9.5 years. She has been working with CSIR-CEERI, Pilani for around 12 years. Her main research interest and expertise is in the area of Compound Semiconductors (III-V and III-N) device engineering, simulations, design, fabrication, and characterization. Since last 24 years, she is working on the design and fabrication of Gallium Arsenide, Gallium Nitride, and Gallium Oxide based FETs/HEMTs discrete and MMICs for High power, High voltage, Sensing and Biosensing applications. She has about 60 research publications in reputed conferences and journals and 3-book chapters to her credit. She has also guided over 30 B.Tech, M.Tech and Ph.D. students for their thesis. She has reviewed several papers, projects, organized and chaired technical events, and conferences.

She has been involved in the successful execution of various International/National projects and collaborations with European Space Agency-Netherland, Lucent Technologies-Germany, BMBF-Germany, Infineon Technologies-Germany and Austria, Thales-France, Tesat Spacecom-Germany, Nanowave Technologies-Canada, UMS-Germany, QinetiQ-UK, IOP Czech republic, ISRO-SAC-India, MIT Delhi and CSIR-India. List of awards received by her includes Best GaAS 2002 paper award, Milano, Italy; Best CS MANTECH 2011 paper award, USA; Arvind prem smriti award, India-2000,-young scholar of year; HRD Scholarship award_1990, DOE, Govt of India, Gold medallist-98 University award, Awarded by then Prime minister Dr. Manmohan Singh.

Employment

  • Central Electronics Engineering Research Institute Senior Principal Scientist
    2011 - Present
  • Ferdinand-Braun-Institut Research Scientist
    2001 - 2010
  • Central Electronics Engineering Research Institute Project Scientist
    1999 - 2001

Education

  • Banasthali University Master of Science (M.Sc)
    1996 - 1998
  • Banasthali University Bachelor of Science (B.Sc)
    1993 - 1996
  • Technical University

Projects & Funding

Projects & funding information is unavailable.

Publications (141)

  • Design and Optimization of GaN Nanowire FET for Direct Coupled FET Logic Circuits
    Materials Today: Proceedings 2023
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  • Effect of Ar-Based Reactive Ion Etching on the Ohmic Contacts in Gallium Oxide Field Effect Transistor
    physica status solidi (a) 2023
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  • First Demonstration of GaN HEMT-based Hand-held System for Non-Invasive Detection of Traumatic Brain Injury using Saliva
    IEEE Sensors Journal 2023
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  • A simulation approach for depletion and enhancement mode in $β$-Ga2O3 MOSFET
    IETE Technical Review 2022
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  • AlGaN/GaN HEMT based biosensor for detection of the HER2 antigen spiked in human serum
    IEEE Transactions on Electron Devices 2022
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  • Antigen-antibody interaction-based GaN HEMT biosensor for C3G detection
    IEEE Sensors Journal 2022
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  • High sensitivity label-free detection of HER2 using an Al--GaN/GaN high electron mobility transistor-based biosensor
    Lab on a Chip 2022
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  • High-k Dielectric Influence on Recessed-Gate Gallium Oxide MOSFETs
    Micro and Nanoelectronics Devices, Circuits and Systems: Select Proceedings of MNDCS 2022 2022
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  • Monte-Carlo-based simulation study of ion-implantation in gallium oxide devices
    Surface and Interface Analysis 2022
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  • Multi-output deep learning model for simultaneous prediction of figure of merits (Ion, Gm, and Vth) of gallium nitride high electron mobility transistors
    Journal of Applied Physics 2022
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