Satyam Kumar

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Publications (4)

• A Generic Framework for MOSFET Reliability—Part II: Gate and Drain Stress—HCD
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2023.3308526
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• A Generic Trap Generation Framework for MOSFET Reliability—Part I: Gate Only Stress–BTI, SILC, and TDDB
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2023.3291333
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• A Physical Model for Bulk Gate Insulator Trap Generation During Bias-Temperature Stress in Differently Processed p-Channel FETs
  IEEE Transactions on Electron Devices 2021 DOI: 10.1109/TED.2020.3045960
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• A Stochastic Framework for the Time Kinetics of Interface and Bulk Oxide Traps for BTI, SILC, and TDDB in MOSFETs
  IEEE Transactions on Electron Devices 2020 DOI: 10.1109/TED.2020.3020533
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