Dr. Sushanta Bordoloi
Also known as: S. Bordoloi
National Institute of Technology Mizoram, Indian Institute of Technology Guwahati, Tezpur University School of Engineering
0000-0002-5179-0861
About
Sushanta Bordoloi is an Assistant Professor in the Department of Electronics and Communication Engineering and the Centre of Excellence in Interdisciplinary Research (IDR) at the National Institute of Technology Mizoram, Aizawl, India. He received both his M.Tech and Ph.D. degrees from the Indian Institute of Technology Guwahati.
His research centres on wide-bandgap III-V semiconductor devices, with particular emphasis on Gallium Nitride (GaN) high electron mobility transistors (HEMTs) and related heterostructure devices. His current work spans device architecture and field-plate engineering for improved breakdown and RF performance, gate dielectric and passivation stack design, electro-thermal and small-signal modelling of scaled AlGaN/GaN HEMTs, and TCAD-based exploration of next-generation low-power device concepts. Alongside core device work, he has interests at the device-to-system interface, including power module reliability, energy storage, and electronics for biomedical instrumentation.
He leads the Bordoloi Ray Group (BRG), a collaborative research group working on the design, simulation, and modelling of GaN-based devices. He served as Head of the Department of Electronics and Communication Engineering at NIT Mizoram from August 2022 to July 2024. He is a Senior Member of the IEEE and of the Indian National Academy of Engineering (INAE).
He welcomes enquiries regarding research collaboration and graduate study. Contact: [email protected] / [email protected]
Employment
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National Institute of Technology Mizoram Teaching / Assistant Professor2014 - Present
Education
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Indian Institute of Technology Guwahati Ph.D2016 - 2022
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Indian Institute of Technology Guwahati M.Tech2014 - 2016
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Tezpur University School of Engineering B.Tech2010 - 2014
Projects & Funding
Projects & funding information is unavailable.
Publications (44)
- Engineered AlGaN/GaN HEMT With β‐Ga2O3 Buffer, Graded AlGaN Back Barrier, and Gate Field Plate for Enhanced Breakdown of 544 V and RF Performance of 110 GHz Save
- AlN Spacer-Induced Improvement in DC, RF, and Breakdown Characteristics of AlN Buffered AlGaN/GaN HEMTs Save
- Design and optimization of a buffer-free AlGaN/GaN HEMT with dielectric stack engineering for high power and frequency applications Save
- Investigating the Temperature‐Induced Variations on the DC, Linearity Distortion and Analog/RF Performance of Ge‐Source DG‐TFETs Save
- Cap-layer engineering in AlGaN/GaN HEMTs with AlN buffer for enhanced breakdown and Johnson Figure of Merit Save
- Strain-engineered Ge-source double-gate TFET with Si/SiGe/Si channel for low-power and THz frequency applications Save
- Investigating the Effect of AlGaN Back Barrier in Buffer Free AlGaN/GaN HEMTs with Stacked HfO2/SiN Passivation for High Frequency Applications Save
- Effect of Barrier Layer Thickness on the Sensing Performance in AlGaN/GaN HEMT-Based Bio-Sensors Save
- Preface Save
- Preface Save