Ravindra Kumar

Employment

• Government Engineering College Sheohar Bihar Assistant Professor
  2023 - Present
• Wipro Technologies Project Engineer
  2013 - 2016

Education

• Indian Institute of Technology Bombay PhD
  2018 - 2023
• National Institute of Technology Delhi Master of Technology
  2016 - 2018
• Cochin University of Science and Technology Bachelor of Technology
  2009 - 2012
• Government Polytechnic Darbhanga Diploma
  2005 - 2008

Projects & Funding

Projects & funding information is unavailable.

Publications (10)

• InAs quantum dot-in-a-well heterostructures with InGaAs, GaAsN and GaAsSb well using digital alloy capping layer
  Current Applied Physics 2023 DOI: 10.1016/j.cap.2022.12.012
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• Novel approach for augmented carrier transfer and reduced Fermi level pinning effect in InAs surface quantum dots
  Applied Surface Science 2023 DOI: 10.1016/j.apsusc.2022.154948
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• Theoretical Study on Vertically Coupled Stranski-Krastanov (SK) on Sub Monolayer (SML) InAs Quantum Dot Heterostructures Employing Ternary and Quaternary Barrier Materials
  IEEE Transactions on Nanotechnology 2023 DOI: 10.1109/TNANO.2023.3276210
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• Strain Minimization of InAs QDs Heterostructures Using Dual Quaternary-Ternary/Ternary-Quaternary Capping Materials via Digital Alloy Capping Layer Approach
  IEEE Transactions on Nanotechnology 2022 DOI: 10.1109/tnano.2022.3199417
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• The role and growth of strain – reducing layer by molecular -beam epitaxy in a multi – stack InAs/(In,Ga)As sub - monolayer quantum dot heterostructure
  Optical Materials 2021 DOI: 10.1016/j.optmat.2021.110817
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• Ameliorating the optical and structural properties of InAs quantum dot heterostructures through digital alloy capping materials: Theory and experiment
  Optical Materials 2020 DOI: 10.1016/j.optmat.2020.110419
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• In-Situ Tailoring of Vertically Coupled InAs p-i-p Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing
  ACS Applied Electronic Materials 2020 DOI: 10.1021/acsaelm.0c00054
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• Performance analysis of dynamic CMOS circuit based on node‐discharger and twist‐connected transistors
  IET Computers & Digital Techniques 2020 DOI: 10.1049/iet-cdt.2018.5045
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• Impact of Digital Alloy Capping Layers on Bilayer InAs Quantum Dot Heterostructures
  IEEE Transactions on Nanotechnology 2020 DOI: 10.1109/tnano.2020.2993690
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• Study on Inter Band and Inter Sub-Band Optical Transitions With Varying InAs/InGaAs Sub-Monolayer Quantum Dot Heterostructure Stacks Grown by Molecular Beam Epitaxy
  IEEE Transactions on Nanotechnology 2020 DOI: 10.1109/tnano.2020.3009597
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