Mahesh Kumar

About

Prof. Mahesh Kumar has received M.Tech degree in Solid State Materials from IIT Delhi and Ph.D degree in Engineering from IISc Bangalore. He worked at Central Research Laboratory of Bharat Electronics Ltd. Bangalore as Scientist from 2005 to 2013. He has received INSA Medal for Young Scientists-2014 by Indian National Science Academy, the MRSI Medal-2016 by Materials Research Society of India, DAE-Young Achiever Award-2016 by BRNS, Research Excellence Award 2020 by IIT Jodhpur and Friedrich Wilhelm Bessel Research Prize by The Alexander von Humboldt Foundation, Germany. He is recipient of the Fulbright-Nehru Academic and Professional Excellence Fellowships-2021 to work at MIT, USA; The Royal Society International Exchange Award-2021 to work at University of Edinburgh, UK; JSPS Invitation Fellowship-2021 to work at Nagasaki University, Japan, PIFI Visiting Scientist fellowship-2021 by Chinese Academy of Science to work at Hefei Institute of Physical Science China; Duo-India Professor Fellowship-2020 to work at University of Stuttgart, Germany,, Bhaskara Advanced Solar Energy Fellowship-2018 to work at South Dakota State University, USA and INSA-DFG International Bilateral Exchange Award-2015 to work at University of Paderborn, Germany. He is also Editorial Board member of Nanotechnology, IEEE Sensors Journal and Nano Express. He is also Fellow of Royal Society of Chemistry and Institute of Physics. He is founding Member and served as Chair of Indian National Young Academy of Sciences. He has published more than 150 research articles. His research interests are focused on 2D materials, Nanomaterials, Sensors, Semiconductor materials and devices.

Employment

• Massachusetts Institute of Technology Fulbright Fellow
  2022 - 2022
• Indian Institute of Technology Jodhpur Professor
  2013 - Present
• Bharat Electronics Ltd Scientist
  2005 - 2013

Education

• Indian Institute of Science Ph.D
  2008 - 2011
• Indian Institute of Technology Delhi M.Tech
  2003 - 2005

Projects & Funding

Projects & funding information is unavailable.

Publications (251)

• CuAlO2-Based Memristor with Device-Aware Temporal Learning for Neuromorphic Applications
  ACS Applied Materials & Interfaces 2026 DOI: 10.1021/acsami.6c12115
  +Save
• Radiation-Induced Charge Trapping Effect in BST/AlGaN/GaN Transistor: Gamma-Ray Dosimeter
  ACS Applied Electronic Materials 2026 DOI: 10.1021/acsaelm.6c01298
  +Save
• Synergistic Enhancement of Uric Acid Sensing Using an Au-SnO₂ Nanoparticle-Decorated β-In₂S₃ Flakes Chemiresistor
  IEEE Sensors Journal 2026 DOI: 10.1109/JSEN.2026.3710214
  +Save
• High-entropy materials: design principles, microstructure engineering, synthesis, and applications
  Journal of Materials Science 2026 DOI: 10.1007/s10853-026-13452-x
  +Save
• Ga2O3 microrods-functionalized In2O3 nanostructures for a low-temperature hydrogen gas sensor
  International Journal of Hydrogen Energy 2026 DOI: 10.1016/j.ijhydene.2026.156337
  +Save
• One-Dimensional Metal Oxide Nanostructures for Room-Temperature Gas Sensing: Synthesis, Optimization, and Future Perspectives
  ACS Sensors 2026 DOI: 10.1021/acssensors.6c00338
  +Save
• Synergistic H2S sensing in Pd-functionalized In2S3 flakes
  Nanotechnology 2026 DOI: 10.1088/1361-6528/ae7382
  +Save
• Synergistic Ti3C2T x MXene–VS2 nanocomposite electrode for ultrasensitive electrochemical detection of lead ions
  Nanotechnology 2026 DOI: 10.1088/1361-6528/ae490d
  +Save
• Spinel CuGa2O4-based memristor enabling synaptic plasticity and associative learning for next-generation memory devices
  Applied Physics Letters 2026 DOI: 10.1063/5.0306155
  +Save
• Real-time hydrogen monitoring via Pd/g-C3N4 functionalized HEMT sensor with IoT connectivity and machine learning forecasting
  Sensors and Actuators B: Chemical 2026 DOI: 10.1016/j.snb.2025.139217
  +Save