Shashank Kumar Banchhor

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Publications (9)

• Reliability Assisted Electro-Physical Modelling of Radiation-Induced Resistance Fluctuation in Nanosheet FET
  IEEE Transactions on Device and Materials Reliability 2026 DOI: 10.1109/TDMR.2026.3713056
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• Impact of Body Bias on Metal–Ferroelectric–Insulator Stacked Si/SiGe Negative Capacitance Line TFET: A Physical Insight
  IEEE Transactions on Dielectrics and Electrical Insulation 2025 DOI: 10.1109/TDEI.2025.3576334
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• Through-silicon-via induced stress-aware FinFET buffer sizing in 3D ICs
  Semiconductor Science and Technology 2022 DOI: 10.1088/1361-6641/ac7742
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• BOX engineering to mitigate negative differential resistance in MFIS negative capacitance FDSOI FET: an analog perspective
  Nanotechnology 2022 DOI: 10.1088/1361-6528/ac328a
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• Negative-to-Positive Differential Resistance Transition in Ferroelectric FET: Physical Insight and Utilization in Analog Circuits
  IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 2022 DOI: 10.1109/TUFFC.2021.3116897
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• A physical insight into variation aware minimum V DD for deep subthreshold operation of FinFET
  Semiconductor Science and Technology 2021 DOI: 10.1088/1361-6641/ac2d0f
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• Investigation of Trap-Induced Performance Degradation and Restriction on Higher Ferroelectric Thickness in Negative Capacitance FDSOI FET
  IEEE Transactions on Electron Devices 2021 DOI: 10.1109/TED.2021.3105952
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• A new physical insight into the zero-temperature coefficient with self-heating in silicon-on-insulator fin field-effect transistors
  Semiconductor Science and Technology 2021 DOI: 10.1088/1361-6641/abd220
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• A New Aspect of Saturation Phenomenon in FinFETs and Its Implication on Analog Circuits
  IEEE Transactions on Electron Devices 2019 DOI: 10.1109/TED.2019.2914867
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