Ram Narayan Chauhan

Employment

• National Institute of Technology Patna Assistant Professor
  2016 - Present
• National Chiao Tung University Scientist
  2015 - 2016

Education

• Indian Institute of Technology Kanpur Ph.D.
  2007 - 2014

Projects & Funding

Projects & funding information is unavailable.

Publications (24)

• Theoretical Insight into the Impact of Bandgap Grading of CIGS on Charge Carrier Dynamics of a Lead-Free Sm2NiMnO6/CIGS Hybrid Solar Cell at Different Working Temperatures
  Journal of Electronic Materials 2026 DOI: 10.1007/s11664-026-13071-x
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• A theoretical investigation into the impact of temperature and band gap variation of La2NiMnO6 oxide double perovskite nanostructures on the performance of La2NiMnO6/MASnI3 based hybrid solar cells
  Journal of Physics and Chemistry of Solids 2024 DOI: 10.1016/j.jpcs.2024.112302
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• Correlation between different characterizations and improved electrochemical performances of cuprous oxide-based nanocrystals
  Bulletin of Materials Science 2023 DOI: 10.1007/s12034-023-02984-6
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• Preparation of optically transparent and conducting radio-frequency sputtered indium tin oxide ultrathin films
  Thin Solid Films 2021 DOI: 10.1016/j.tsf.2020.138471
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• Structural and optical properties of sol-gel derived Zn <inf>1−x</inf> Ti <inf>x</inf> O <inf>1+x</inf> nanoparticles
  Materials Letters 2019 DOI: 10.1016/j.matlet.2019.03.002
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• Effect of NiO substitution on the structural and dielectric behaviour of NaNbO <inf>3</inf>
  Journal of Applied Physics 2018 DOI: 10.1063/1.5013643
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• Electrical performance and stability of tungsten indium zinc oxide thin-film transistors
  Materials Letters 2018 DOI: 10.1016/j.matlet.2017.12.020
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• Spectroscopic studies of Co<inf>2</inf>TiO<inf>4</inf> and Co<inf>3</inf>O<inf>4</inf> two-phase composites
  Physica Status Solidi (B) Basic Research 2016 DOI: 10.1002/pssb.201600295
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• Silicon induced stability and mobility of indium zinc oxide based bilayer thin film transistors
  Applied Physics Letters 2016 DOI: 10.1063/1.4968001
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• Photoluminescence and Reliability Study of ZnO Cosputtered IGZO Thin-Film Transistors under Various Ambient Conditions
  IEEE Transactions on Electron Devices 2016 DOI: 10.1109/TED.2016.2525799
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