Dr. Pawan Kumar

About

Research scientist at IMEC-Belgium to develop state-of-the-art technique for growing 200/300 mm wafer-scale 2D materials. More than 3 years of experience as a postdoctoral researcher at the University of Pennsylvania, working with two eminent scientific leaders, Prof. Deep Jariwala and Prof. Eric Stach. Overall, in the past 10 years, learned about light-matter interaction at the atomic scale in 2D layers for Photonics applications; Structural reconstruction and their diffusion at the atomic scale using in situ S/TEM, Exciton-Polariton performances at Quantum cascade regime; ME, Metal oxide-CVD and MOCVD growth up to wafer scale; and handson with Operando experimentation for the design and development of the in-situ S/TEM holder designated for the 2D-layered material system.

The highlight of expertise:
* Semiconducting channel materials for the Angstrom node logic module.
* Process engineering of atomic-scale materials.
* 2D Materials growth utilizing metal oxide-CVD and MOCVD techniques.
* Optical "Raman and PL" spectroscopy for defectivity analysis.
* Wafer-scale large area 2D layer transfer.
* In-situ scanning/transmission electron microscopy analysis using probe-corrected STEM operation.
* Cross-sectional TEM lamella preparation by plasma ion FIB.

Employment

• Imec R&D specialist
  2022 - Present
• University of Pennsylvania Postdoctoral Researcher
  2019 - 2022
• Indian Institute of Technology Mandi Senior project Scientist
  2018 - 2019
• Indian Institute of Technology (BHU) JRF
  2013 - 2014

Education

• Indian Institute of Technology Mandi Ph.D.
  2014 - 2018
• University Institute of Technology, Rajiv Gandhi Proudyogiki Vishwavidyalaya M. Tech
  2011 - 2013

Projects & Funding

Projects & funding information is unavailable.

Publications (49)

• Selectively Demarcating and Modifying Defects in Two-Dimensional Semiconductors in a 300 mm Fab
  2026 DOI: 10.21203/rs.3.rs-9853431/v1
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• Experimental demonstration of corrugated nanolaminate films as reflective light sails
  Nature Communications 2026 DOI: 10.1038/s41467-026-73414-4
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• Impact of remote phonon scattering on carrier transport in monolayer MoS2 MOSFETs
  Solid-State Electronics 2026 DOI: 10.1016/j.sse.2026.109387
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• Spontaneous and self-oriented growth during chemical vapor epitaxy of single-crystalline MoS2
  2025 DOI: 10.21203/rs.3.rs-7114151/v1
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• Nanoscale spectroscopic investigation of impact of strain on field-effect mobility of WS2
  Nanotechnology 2025 DOI: 10.1088/1361-6528/addacc
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• Atomic scale determination of magnetism and stoichiometry at the La0.7Sr0.3MnO3/SrTiO3 interface: investigation of inverse hysteresis
  NPG Asia Materials 2025 DOI: 10.1038/s41427-025-00590-y
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• Oriented Two-dimensional Semiconducting Crystals on Amorphous Dielectrics by Selective Artificial Epitaxy
  2024 DOI: 10.21203/rs.3.rs-4504047/v1
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• Observation of Sub-10 nm Transition Metal Dichalcogenide Nanocrystals in Rapidly Heated van der Waals Heterostructures
  ACS Applied Materials & Interfaces 2023 DOI: 10.1021/acsami.3c13471
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• Site-specific optical encryption via nanoscale integration of carbon on monolayer WS2
  Carbon 2023 DOI: 10.1016/j.carbon.2023.118339
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• High-Temperature Pretreatment Effect on Co/SiO2 Active Sites and Ethane Dehydrogenation
  ACS Catalysis 2022 DOI: 10.1021/acscatal.2c03180
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