GM
G. Mohan Muralikrishna
Also known as: G.M. Muralikrishna, M.M. Garlapati, Mohan Muralikrishna Garlapati
Indian Institute of Technology Patna, University of Münster, Indian Institute of Technology Madras, Rajiv Gandhi University of Knowledge Technologies, Westfälische Wilhelms-Universität Münster
Employment
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Indian Institute of Technology Patna Assistant Professor2025 - Present
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University of Münster Group Leader/Senior Research Associate2024 - 2024
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Westfälische Wilhelms-Universität Münster Alexander von Humboldt Research Fellow2022 - 2024
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Westfälische Wilhelms-Universität Münster Post-Doctoral Researcher2021 - 2022
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Indian Institute of Technology Madras Institute Pre-Doctoral Fellow2020 - 2021
Education
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Indian Institute of Technology Madras Ph.D.2015 - Present
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Rajiv Gandhi University of Knowledge Technologies B.Tech2011 - 2015
Projects & Funding
Projects & funding information is unavailable.
Publications (33)
- Ni diffusion in the equiatomic CoFeMnNiV high-entropy alloy: Unexpected impact of second-phase precipitation on bulk diffusion rates Save
- Retarded relaxation of grain boundaries’ non-equilibrium state in medium-entropy CoFeNi alloy probed by radiotracer diffusion Save
- Grain boundary diffusion in compositionally complex alloys: A comprehensive review Save
- Impact of Interstitial Carbon on Local Lattice Distortions in CoCrFeMnNi High-Entropy Alloys Save
- Ni Diffusion in the Equiatomic CoFeMnNiV High-entropy Alloy: Unexpected Impact of Second-phase Precipitation on Bulk Diffusion Rates Save
- Impact of interstitial carbon on local lattice distortions in CoCrFeMnNi high-entropy alloys Save
- Grain- and interphase boundary diffusion in eutectic AlCoCrFeNi2.1 compositionally complex alloy Save
- The impact of non-equilibrium vacancies on mobilities and Kirkendall porosity formation in diffusion couples: Experiments and theory for the Cu–Fe–Ni system as a case study Save
- Grain boundary diffusion and segregation of Cr in Ni Σ11(1̄13)[110] bicrystals: Decoding the role of grain boundary defects Save
- Demystifying the Semiconductor‐to‐Metal Transition in Amorphous Vanadium Pentoxide: The Role of Substrate/Thin Film Interfaces Save