Janesh K Kaushik

About

J. K. Kaushik received B.Tech. degree in Electronics and Communication from Delhi College of Engineering, Delhi in 2002 and Ph.D. degree from Indian Institute of Technology Delhi in 2015. His research includes the study of electrically active defects that are detrimental to the device performance.
He joined Defence Institute of Advance Technology (Defence Research and Development Organization (DRDO), Govt. of India) as Scientist in 2004. There was an induction training program in which he designed a Fractal antenna. In January 2005 he was transferred to Solid State Physics Laboratory (DRDO), Delhi. During past twelve years, he has been worked on RF design and modelling of passive circuits for MMIC applications. His current research involves modelling and simulation of GaN devices, deep-level transient spectroscopy and electrical characterization of semiconductor devices.

Employment

• DRDO Solid State Physics Laboratory Scientist
  2005 - Present
• Defence Institute of Advanced Technology Scientist
  2004 - 2004
• Samtel Color Ltd Section cheif
  1996 - 2001

Education

• Indian Institute of Technology Delhi PhD
  2009 - 2015
• Delhi College of Engineering B.Tech.
  ? - 2002

Projects & Funding

Projects & funding information is unavailable.

Publications (12)

• On the Onset of Breakdown of the Virtual Gate in AlGaN/GaN HEMTs
  IEEE Transactions on Electron Devices 2022 DOI: 10.1109/TED.2022.3172234
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• RF Sputtered MoO3 Thin Film on Si (100) for Gas Sensing Applications
  Defence Science Journal 2020 DOI: 10.14429/dsj.70.16342
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• Two-dimensional analytical modelling of drain current collapse in AlGaN/GaN HEMTs using multi-phonon ionisation by an electric field
  Semiconductor Science and Technology 2020 DOI: 10.1088/1361-6641/ab8e62
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• Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors
  Thin Solid Films 2016 DOI: 10.1016/j.tsf.2016.06.003
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• Admittance spectroscopy and capacitance dispersion of AlGaN/GaN hetero-structures
  Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on 2014
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• Analysis of fast and slow trap states on electrical performance of AlGaN/GaN HEMTs
  Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on 2014
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• On the Origin of Kink Effect in Current–Voltage Characteristics of AlGaN/GaN High Electron Mobility Transistors
  IEEE Trans. Electron Devices 2013 DOI: 10.1109/ted.2013.2279158
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• Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT
  Semicond. Sci. Technol. 2012 DOI: 10.1088/0268-1242/28/1/015026
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• Design & Modeling of Power Combiner/Divider for MMIC/MIC Applications
  2006
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• Closed form model for input resistance of rectangular microstrip patch antenna
  Asia Pacific Microwave conference (APMC-2004) 2004
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