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Publications (7)
- Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing Save
- Impact of InGaN notch on sensitivity in dielectric modulated dual channel GaN MOSHEMT for label-free biosensing Save
- Compact Modeling of Schottky Gate-all-around Silicon Nanowire Transistors with Halo Doping Save
- Correction to: Noise Characterization of InAs Based Composite Channel DG -MOSHEMT with Different Gate Dielectrics (Silicon, (2022), 14, 5, (1925-1933), 10.1007/s12633-021-00954-3) Save
- Noise Characterization of InAs Based Composite Channel DG -MOSHEMT with Different Gate Dielectrics Save
- Influence of HfAlOx in DC, RF and Microwave Noise Performance of Dual-Channel Single-Gate InAs MOSHEMT Save
- Performance of Gate Engineered Symmetric Double Gate MOS Devices and circuits for ultra-low power Analog and RF applications Save