RS

Raghvendra Sahai Saxena

Also known as: R. S. Saxena, Raghvendra S. Saxena

DRDO Solid State Physics Laboratory, Indira Gandhi National Open University, Indian Institute of Technology Delhi, Indian Institute of Technology Bombay

ORCID iD 0000-0002-6129-7771
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About

Dr. Raghvendra Sahai Saxena was born in Etah district, Uttar Pradesh, India. After completing his B. E. degree in Electronics and Communication Engineering from G. B. Pant Engineering College, Uttarakhand in 1997, he joined Solid State Physics Laboratory (SSPL), Delhi in 1998. He received the M. Tech. degree in Microelectronics from Indian Institute of Technology (IIT), Bombay in 2003. He was awarded Prof. G. N. Revankar Prize by IIT Bombay for securing the highest marks in microelectronics (batch 2001-2003), Electrical Engineering Department, IIT Bombay. He received his Ph.D. degree in Design and Simulation of Trench Gate Power MOSFETs for RF and Switching Applications from IIT Delhi in 2012. He did post graduate diploma in applied statistics (PGDAST) from IGNOU in 2016, for which he received Gold Medal. He is American Society for Quality (ASQ) certified reliability engineer.
Since 1998, Dr. Saxena has been working at SSPL, where he is heading a research group working on the design, modeling and characterization of Infrared detectors and their readout circuits. He is a fellow of IETE and IEI. He is also a member of Semiconductor Society of India and International Association of Engineers.

Employment

  • DRDO Solid State Physics Laboratory Scientist-F
    1998 - Present

Education

  • Indira Gandhi National Open University Post Graduate Diploma in Applied Statistics (PGDAST)
    2015 - 2016
  • Indian Institute of Technology Delhi PhD
    2006 - 2012
  • Indian Institute of Technology Bombay M. Tech.
    2001 - 2003
  • Govind Ballabh Pant Engineering College B.E.
    1993 - 1997

Projects & Funding

Projects & funding information is unavailable.

Publications (53)